International audienceHybrid bonding is a very promising 3D packaging technology which allows extremely high interconnect density between electronic chips. In its most advanced interconnect pitch, Cu pads as small as 300 nm may be used. Successful bonding relies directly on the thermomechanical displacement of Cu above the oxide matrix. Hence, the control of this technology relies on a profound understanding of the thermomechanical behavior of 300 nm Cu pads. To achieve this goal, X-ray synchrotron Laue micro-diffraction is used to monitor the strain state and orientation of individual Cu pads in situ during heat treatment. The experimental findings are completed with Finite Element Modeling simulations including elastic anisotropy and plas...
Cu-to-Cu direct bonding has been regarded as an important approach to achieve three-dimensional inte...
This paper presents the results of nanoindentation experiments on Cu single crystals and Cu grains i...
International audienceDirect Bonded Copper (DBC) are produced by high temperature (>1000 °C) bonding...
International audienceHybrid bonding is a very promising 3D packaging technology which allows extrem...
The investigation of copper microstructure at nanoscale using synchrotron-based Laue microdiffractio...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
Advancement of the current Two-Dimensional integrated circuits (2D-ICs) is limited by increasing int...
In 3D IC integration, a critical demand of interfacial joints in high-end devices is ultra-fine pitc...
Interconnects in microelectronic packages and devices serve as the mechanical and electrical connect...
One of the primary and critical requirements for high quality wafer level thermocompression Copper-C...
Molecular dynamics (MD) simulations are performed to study crystalline plasticity during nanoindenta...
Cu-to-Cu wire bonding provides benefits both from economical and from electrical point of view. Howe...
This study presents the results for Cu/In bonding based on the solid–liquid interdiffusion (SLID) pr...
The material characterization of single crystalline Cu columns was numerically carried out at the su...
textThermomechanical stresses in the copper interconnects are directly related to void formation an...
Cu-to-Cu direct bonding has been regarded as an important approach to achieve three-dimensional inte...
This paper presents the results of nanoindentation experiments on Cu single crystals and Cu grains i...
International audienceDirect Bonded Copper (DBC) are produced by high temperature (>1000 °C) bonding...
International audienceHybrid bonding is a very promising 3D packaging technology which allows extrem...
The investigation of copper microstructure at nanoscale using synchrotron-based Laue microdiffractio...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
Advancement of the current Two-Dimensional integrated circuits (2D-ICs) is limited by increasing int...
In 3D IC integration, a critical demand of interfacial joints in high-end devices is ultra-fine pitc...
Interconnects in microelectronic packages and devices serve as the mechanical and electrical connect...
One of the primary and critical requirements for high quality wafer level thermocompression Copper-C...
Molecular dynamics (MD) simulations are performed to study crystalline plasticity during nanoindenta...
Cu-to-Cu wire bonding provides benefits both from economical and from electrical point of view. Howe...
This study presents the results for Cu/In bonding based on the solid–liquid interdiffusion (SLID) pr...
The material characterization of single crystalline Cu columns was numerically carried out at the su...
textThermomechanical stresses in the copper interconnects are directly related to void formation an...
Cu-to-Cu direct bonding has been regarded as an important approach to achieve three-dimensional inte...
This paper presents the results of nanoindentation experiments on Cu single crystals and Cu grains i...
International audienceDirect Bonded Copper (DBC) are produced by high temperature (>1000 °C) bonding...