TiN/ZrO2/Ti/Al metal–insulator–metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications

We provide the first report of the structural and electrical properties of TiN/ZrO 2 /Ti/Al metal-insulator-metal capacitor structures, where the ZrO 2 thin film (7-8 nm) is deposited by ALD using the new zirconium precursor ZrD-04, also known as Bis(methylcyclopentadienyl) methoxymethyl. Measured capacitance-voltage ( C - V ) and current-voltage ( I - V ) characteristics are reported for premetallization rapid thermal annealing (RTP) in N 2 for 60 s at 400degC, 500degC, or 600degC. For the RTP at 400degC, we find very low leakage current densities on the order of nanoamperes per square centimeter at a gate voltage of 1 V and low capacitance equivalent thickness values of ~ 0.9 nm at a gate voltage of 0 V. The dielectric constant of ZrO 2 is 31 plusmn 2 after RTP treatment at 400degC