Organic transistor parameter estimation and accurate modeling for process optimization

The development of accurate tools and models able to analyze and predict the electronic device properties is compulsory to promote the technological advancement and particularly to improve fabrication process in the case of unconventional materials. In this work the model proposed for the interpretation of the data obtained with the admittance spectroscopy technique is useful for investigating the causes of the property differences in organic thin film transistors fabricated with various gate dielectrics. The extracted parameters show that the use of the UV-cured copolymer PVP-co-PMMA as dielectric layer in a pentacene-based OTFT, instead of the as-deposited copolymer or the standard polymer PVP, reduces the ion diffusion through gate insulator and the density of trap states at the insulator-semiconductor interface, while improving the semiconductor structural order, therefore producing devices with lower and stable threshold voltage and lessened hysteresis