Numerical simulations are used to analyse the effect on static and dynamic behavior of local lifetime control applied to power PiN diodes. Extended use of mixed mode device circuit simulations allows the analysis of diode behavior in realistic working conditions. In the paper the emphasis is given on the effect of the position and of the extension of the reduced lifetime region on diode performance. The low lifetime region, the result of complex damage in the epilayer, is approximated with a rectangular shape in the simulator, and is defined by its thickness, position and amount of lifetime reduction. The simulations show that the optimal position for the low-lifetime region is at the beginning of the epilayer region on the anode side, whil...