First principle calculations for efficient transition metal contacts with monolayer MoS2-WSe2 are carried out for complementary device application. The four parameters analysed are exchange energy, density of states, entropy measurements, and effective potential periodicity at interface. Each characterises the electrical contact, as exchange energy establishes stable interface with minimum energy (contacts with strong bonding); density of states determines the charge polarity selection (electron or hole transport) and carrier flow rate through interfaces; entropy measurement reveal contacts with minimum phonon scattering rate (enhanced mobility); and effective potential continuity provides an alternative view of contact resistance from quan...
Fermi level pinning (FLP) in metal-MoS2 contacts induces large Schottky barrier heights which in tur...
Abstract Utilizing a two-dimensional material in an electronic device as channel layer inevitably in...
A low Schottky barrier height (SBH) at source/drain contact is essential for achieving high drive cu...
First principle based atomistic simulations are carried out to study the contact interface between m...
Among various 2D materials, monolayer transition-metal dichalcogenide (mTMD) semiconductors with int...
Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic excepti...
Studying the reason why single-layer molybdenum disulfide (MoS2) appears to fall short of its promis...
Monolayer (ML) transition-metal dichalcogenides are considered as promising channel materials in nex...
Two dimensional (2D) transitional metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) h...
Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic excepti...
Contact resistance hinders the high performance of electrical devices, especially devices based on t...
Contact resistance hinders the high performance of electrical devices, especially devices based on t...
ABSTRACT: This work presents a systematic study toward the design and first demonstration of high-pe...
This work presents a systematic study toward the design and first demonstration of high-performance ...
Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer sc...
Fermi level pinning (FLP) in metal-MoS2 contacts induces large Schottky barrier heights which in tur...
Abstract Utilizing a two-dimensional material in an electronic device as channel layer inevitably in...
A low Schottky barrier height (SBH) at source/drain contact is essential for achieving high drive cu...
First principle based atomistic simulations are carried out to study the contact interface between m...
Among various 2D materials, monolayer transition-metal dichalcogenide (mTMD) semiconductors with int...
Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic excepti...
Studying the reason why single-layer molybdenum disulfide (MoS2) appears to fall short of its promis...
Monolayer (ML) transition-metal dichalcogenides are considered as promising channel materials in nex...
Two dimensional (2D) transitional metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) h...
Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic excepti...
Contact resistance hinders the high performance of electrical devices, especially devices based on t...
Contact resistance hinders the high performance of electrical devices, especially devices based on t...
ABSTRACT: This work presents a systematic study toward the design and first demonstration of high-pe...
This work presents a systematic study toward the design and first demonstration of high-performance ...
Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer sc...
Fermi level pinning (FLP) in metal-MoS2 contacts induces large Schottky barrier heights which in tur...
Abstract Utilizing a two-dimensional material in an electronic device as channel layer inevitably in...
A low Schottky barrier height (SBH) at source/drain contact is essential for achieving high drive cu...