Realization and characterization of manganese doped BST thin films for reflectarray applications

International audienceIn the present work, Mn-doped Ba1-xSrxTiO3 (BST) thin films were realized by Chemical Solution Deposition (CSD) on alumina as the foreseen application for a reflect array needs integration of the ferroelectric on an insulating substrate. The optimum dopant rate to be inserted depending on the material's defect density, we have studied BST doping with a manganese content ranging from 0 % to 2 %. The dielectric and electrical characteristics were investigated as a function of the Mn content in the frequency range of 100 Hz to 5 GHz