Add to ORKGIn this work, we explored the influence of the low growth temperatures on the structural and optical properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum and ammonia (NH3) plasma. Structural and optical results show that AlN films grown by self-limited plasma enhanced atomic layer deposition are polycrystalline at temperatures as low as 100 degrees C
Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-en...
Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from...
Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from...
Crystalline aluminum nitride (AlN) films have been prepared by plasma-enhanced atomic layer depositi...
We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN...
The authors have studied and compared the initial growth and properties of AlN films deposited on Si...
The influence of N2/H2 and ammonia as N source materials on the properties of AlN films grown by pla...
Aluminum nitride (AlN) is of interest in many high frequency electronic devices due to its high ther...
© Published under licence by IOP Publishing Ltd. Aluminum nitride (AlN) thin film was grown by plasm...
Using real-time in-situ spectroscopic ellipsometry and ex-situ atomic force microscopy and X-ray dif...
Crystalline aluminum nitride (AlN) films have been prepared by plasma enhanced atomic layer depositi...
Aluminum nitride (AlN) film is a promising material which is used in various fields. In this study, ...
We report on the low-temperature self-limiting growth and characterization of III-Nitride thin films...
Cataloged from PDF version of article.We report on the self-limiting growth and characterization of ...
Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-en...
Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-en...
Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from...
Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from...
Crystalline aluminum nitride (AlN) films have been prepared by plasma-enhanced atomic layer depositi...
We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN...
The authors have studied and compared the initial growth and properties of AlN films deposited on Si...
The influence of N2/H2 and ammonia as N source materials on the properties of AlN films grown by pla...
Aluminum nitride (AlN) is of interest in many high frequency electronic devices due to its high ther...
© Published under licence by IOP Publishing Ltd. Aluminum nitride (AlN) thin film was grown by plasm...
Using real-time in-situ spectroscopic ellipsometry and ex-situ atomic force microscopy and X-ray dif...
Crystalline aluminum nitride (AlN) films have been prepared by plasma enhanced atomic layer depositi...
Aluminum nitride (AlN) film is a promising material which is used in various fields. In this study, ...
We report on the low-temperature self-limiting growth and characterization of III-Nitride thin films...
Cataloged from PDF version of article.We report on the self-limiting growth and characterization of ...
Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-en...
Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-en...
Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from...
Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from...