International audienceFerroelectric thin films are attractive materials for tunable microwave devices such as electrically tunable filters, capacitors, oscillators, resonators or phase shifters. For this type of application, the ferroelectric material needs to have a high dielectric permittivity and low losses. These dielectric properties are very sensitive to the quality of the material structure and more particularly to defects. In ferroelectric perovskite materials, oxygen vacancies are the most important defects that create conduction in the film. Hence the losses are important and it becomes necessary to dope the film in order to decrease the influence of the defects. In the present work, Mn-doped Ba0,80Sr0,20TiO3 (BST) thin films are ...
International audienceIn the present paper, the influence of manganese doping on the dielectric prop...
International audienceIn the present paper, the influence of manganese doping on the dielectric prop...
The interface layer between the ferroelectric thin film and the electrodes have been stated to be re...
International audienceFerroelectric thin films are attractive materials for tunable microwave device...
Ba0.7-xSr0.3MnxTiO3 (x = 0, 0.025, 0.05) thin films have been prepared on copper foils using sol-gel...
International audienceIn the present work, Mn-doped Ba1-xSrxTiO3 (BST) thin films were realized by C...
International audienceIn the present work, Mn-doped Ba1-xSrxTiO3 (BST) thin films were realized by C...
International audienceWe have investigated the macroscopic and microscopic properties of large sets ...
International audienceWe have investigated the macroscopic and microscopic properties of large sets ...
We have investigated the macroscopic and microscopic properties of large sets of Ba0.7Sr0.3TiO3 thin...
Ba(Mg1∕3Nb2∕3)O3 (BMN) doped and undoped Ba0.45Sr0.55TiO3 (BST) thin films were deposited via radio ...
Manganese (Mn) doped Pb(Zr,Ti)O3 thin films were prepared by sol-gel technique and their dielectric,...
International audienceIn the present paper, the influence of manganese doping on the dielectric prop...
International audienceIn the present paper, the influence of manganese doping on the dielectric prop...
Thin films of Pb0.3Sr0.7TiO3 (PST) and 2mol% Mn-doped PST (Pb0.3Sr0.7Ti0.98Mn0.02O3 or PSMT2) were f...
International audienceIn the present paper, the influence of manganese doping on the dielectric prop...
International audienceIn the present paper, the influence of manganese doping on the dielectric prop...
The interface layer between the ferroelectric thin film and the electrodes have been stated to be re...
International audienceFerroelectric thin films are attractive materials for tunable microwave device...
Ba0.7-xSr0.3MnxTiO3 (x = 0, 0.025, 0.05) thin films have been prepared on copper foils using sol-gel...
International audienceIn the present work, Mn-doped Ba1-xSrxTiO3 (BST) thin films were realized by C...
International audienceIn the present work, Mn-doped Ba1-xSrxTiO3 (BST) thin films were realized by C...
International audienceWe have investigated the macroscopic and microscopic properties of large sets ...
International audienceWe have investigated the macroscopic and microscopic properties of large sets ...
We have investigated the macroscopic and microscopic properties of large sets of Ba0.7Sr0.3TiO3 thin...
Ba(Mg1∕3Nb2∕3)O3 (BMN) doped and undoped Ba0.45Sr0.55TiO3 (BST) thin films were deposited via radio ...
Manganese (Mn) doped Pb(Zr,Ti)O3 thin films were prepared by sol-gel technique and their dielectric,...
International audienceIn the present paper, the influence of manganese doping on the dielectric prop...
International audienceIn the present paper, the influence of manganese doping on the dielectric prop...
Thin films of Pb0.3Sr0.7TiO3 (PST) and 2mol% Mn-doped PST (Pb0.3Sr0.7Ti0.98Mn0.02O3 or PSMT2) were f...
International audienceIn the present paper, the influence of manganese doping on the dielectric prop...
International audienceIn the present paper, the influence of manganese doping on the dielectric prop...
The interface layer between the ferroelectric thin film and the electrodes have been stated to be re...