In this study, a series of [3-(2-aminoethyl)amino]propyl-heptaisobutyl substituted polyhedral oligomeric silsesquioxane (AHIP) containing polyimide (PI) nanocomposites were successfully prepared. Structural, thermal and electrical properties of the polyimide nanocomposites were studied. The properties of AHIP containing polyimides were compared with those of the neat polyimide films. The surface morphology of the prepared AHIP containing polyimides were determined by using Scanning Electron Microscopy (SEM). The hydrophilic/hydrophobic nature of AHIP/polyimide composites were analyzed by measuring their water contact angles. It was found that the addition of AHIP into the polyimide slightly increased the contact angle values. The incorporat...
High-frequency power transformers are conducive to the reliable grid connection of distributed energ...
Thin dielectric films composed of silica and polyimide were prepared from tetraethoxysilane (TEOS) a...
Interlayer dielectric film formation under Al wirings for VLSI and ULSI devices requires low tempera...
Polyhedral oligomeric silsequioxane (POSS), having eight hydroxyl groups for the preparation of nano...
ABSTRACT: Polyimide-tethered polyhedral oligomeric silsesquioxane, (R7R′Si8O12) (POSS), nanocom-posi...
The preparation of hybrid nanocomposite materials derived from polyhedral oligomeric silsesquioxane ...
A series of functional polyhedral oligomeric silsesquioxane (POSS)/polyimide (PI) nanocomposites wer...
Polyhedral oligomeric silsesquioxane (POSS) molecules are a combination of organic and inorganic hyb...
Hybrid nanocomposite films of poly(vinylsilsesquioxane) (PVSSQ) and polyimide (PI) (PI/PVSSQ) were p...
Polyimide (PI)/poly(vinylsilsesquioxane) (PVSSQ) (PI/PVSSQ) hybrid composite films were prepared fro...
A new type of low dielectric polyimide/poly(silsesquioxane)-like (PI/PSSQ-like) hybrid nanocomposite...
This paper presents the results of the thermal, mechanical and dielectric measurements conducted on ...
This paper presents the results of the dielectric measurements conducted on polymer nanocompounds co...
An effective method is proposed to prepare octa(aminophenyl) silsesquioxane (OAPS) functionalized g...
In many applications in electronic power, and high-voltage engineering, there is a need to improve t...
High-frequency power transformers are conducive to the reliable grid connection of distributed energ...
Thin dielectric films composed of silica and polyimide were prepared from tetraethoxysilane (TEOS) a...
Interlayer dielectric film formation under Al wirings for VLSI and ULSI devices requires low tempera...
Polyhedral oligomeric silsequioxane (POSS), having eight hydroxyl groups for the preparation of nano...
ABSTRACT: Polyimide-tethered polyhedral oligomeric silsesquioxane, (R7R′Si8O12) (POSS), nanocom-posi...
The preparation of hybrid nanocomposite materials derived from polyhedral oligomeric silsesquioxane ...
A series of functional polyhedral oligomeric silsesquioxane (POSS)/polyimide (PI) nanocomposites wer...
Polyhedral oligomeric silsesquioxane (POSS) molecules are a combination of organic and inorganic hyb...
Hybrid nanocomposite films of poly(vinylsilsesquioxane) (PVSSQ) and polyimide (PI) (PI/PVSSQ) were p...
Polyimide (PI)/poly(vinylsilsesquioxane) (PVSSQ) (PI/PVSSQ) hybrid composite films were prepared fro...
A new type of low dielectric polyimide/poly(silsesquioxane)-like (PI/PSSQ-like) hybrid nanocomposite...
This paper presents the results of the thermal, mechanical and dielectric measurements conducted on ...
This paper presents the results of the dielectric measurements conducted on polymer nanocompounds co...
An effective method is proposed to prepare octa(aminophenyl) silsesquioxane (OAPS) functionalized g...
In many applications in electronic power, and high-voltage engineering, there is a need to improve t...
High-frequency power transformers are conducive to the reliable grid connection of distributed energ...
Thin dielectric films composed of silica and polyimide were prepared from tetraethoxysilane (TEOS) a...
Interlayer dielectric film formation under Al wirings for VLSI and ULSI devices requires low tempera...