Scalability of Multifinger HEMT Performance
- Crupi G.
- Raffo A.
- Vadala Valeria
- Vannini G.
- Schreurs D. M. M. -P.
- Caddemi A.
Publication date
January 2020
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
This letter aims at investigating the impact of the gate width on the microwave field effect transistor (FET) performance, focusing on the GaAs high-electron-mobility transistor (HEMT) technology as a case study. To accomplish this complex task, the small-signal equivalent-circuit elements together with the major RF figures of merit are thoroughly analyzed for seven HEMTs based on an interdigitated layout. The gate-width impact on the device performance is quantitatively and exhaustively estimated using a mathematical and systematical approach
Add to ORKG