The fast paced research field of quantum electronics is dominated by the investigation of 2D van der Waals materials. This class of materials consist of different properties ranging from semiconductor, semimetal, superconductor, ferromagnetic and many more. Now with a further possibility to stack different 2D materials to form heterostructures, an unlimited potential of applications have risen. In this thesis we use Field effect transistor geometry with Ionic Liquid (IL) gating to investigate layered transition metal dichalcogenides. Using the spectroscopic capability of IL gating we investigate the band gap of an indirect semiconductor and with high carrier density accumulation drive the indirect semiconductor to emit light. In the second ...
Materials and device innovations are the keys to future technology revolution. For MOSFET scaling in...
Semiconductor heterostructures are the fundamental platform for many important device applications s...
We realized ambipolar field-effect transistors by coupling exfoliated thin flakes of tungsten disulf...
The fast paced research field of quantum electronics is dominated by the investigation of 2D van der...
Ionic-liquid gating (ILG) is able to enhance carrier densities well above the achievable values in t...
The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to ...
Recent technical progress demonstrates the possibility of stacking together virtually any combinatio...
Ionic liquid gating has proved to be effective in inducing emergent quantum phenomena such as superc...
Recent technical progress demonstrates the possibility of stacking together virtually any combinatio...
Functionalities of two-dimensional (2D) crystals based on semiconducting transition metal dichalcoge...
We demonstrate ionic liquid (IL) gating of suspended few-layer MoS<sub>2</sub> transistors, where io...
Transition metal dichalcogenides are layered materials which are composed of transition metals and c...
Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalco...
We realized ambipolar field-effect transistors by coupling exfoliated thin flakes of tungsten disulf...
Indirect excitons (IXs) are explored both for studying quantum Bose gases in semiconductor materials...
Materials and device innovations are the keys to future technology revolution. For MOSFET scaling in...
Semiconductor heterostructures are the fundamental platform for many important device applications s...
We realized ambipolar field-effect transistors by coupling exfoliated thin flakes of tungsten disulf...
The fast paced research field of quantum electronics is dominated by the investigation of 2D van der...
Ionic-liquid gating (ILG) is able to enhance carrier densities well above the achievable values in t...
The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to ...
Recent technical progress demonstrates the possibility of stacking together virtually any combinatio...
Ionic liquid gating has proved to be effective in inducing emergent quantum phenomena such as superc...
Recent technical progress demonstrates the possibility of stacking together virtually any combinatio...
Functionalities of two-dimensional (2D) crystals based on semiconducting transition metal dichalcoge...
We demonstrate ionic liquid (IL) gating of suspended few-layer MoS<sub>2</sub> transistors, where io...
Transition metal dichalcogenides are layered materials which are composed of transition metals and c...
Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalco...
We realized ambipolar field-effect transistors by coupling exfoliated thin flakes of tungsten disulf...
Indirect excitons (IXs) are explored both for studying quantum Bose gases in semiconductor materials...
Materials and device innovations are the keys to future technology revolution. For MOSFET scaling in...
Semiconductor heterostructures are the fundamental platform for many important device applications s...
We realized ambipolar field-effect transistors by coupling exfoliated thin flakes of tungsten disulf...