Characterizing static random access memories (SRAMs) is difficult but necessary to understandits properties. Choosing an optimal memory requires critical characteristics such as delay, power, and area. Characterization can be done accurately using SPICE but is slow. Analytical models aim to provide quick results to allow for rapid design iterations with the memory. These models do not require perfect accuracy but must maintain fidelity. This thesis presents the implementation of two Elmore-based models and statistical models for SRAMs. In addition, this thesis assesses the models' accuracy, fidelity, speed, and additional costs
Resistive switching random access memory (RRAM) is a leading candidate for next-generation nonvolati...
Phase-change random access memory (PCRAM) is an emerging memory technology with attractive features,...
Semiconductor random access memories are complex systems that can be described by performance parame...
Characterizing static random access memories (SRAMs) is difficult but necessary to understandits pro...
Abstract: Memory circuits such as static random-access memory (SRAM) and dynamic random-access memor...
With the development of microprocessor, large-storage and high-speed memories are required to keep u...
A product may fail when design parameters are subject to large deviations. To guarantee yield one li...
In recent years the demand for low power devices has been increases tremendously. To solve the power...
Abstract In this work, we provide a comprehensive discussion on the various models proposed for the ...
Abstract — This paper presents two fast and accurate methods to estimate the lower bound of supply v...
For robust design of SRAM memories, it is not sufficient to guarantee good statistical margins on th...
Resistive switching random access memory (RRAM) is a leading candidate for next-generation nonvolati...
University of Minnesota Ph.D. dissertation. July 2010. Major: Electrical Engineering. Advisor: Sachi...
It has been shown that sub 100nm SRAM is particularly sensitive to stochastic device variability. In...
Abstract—Process variation poses a significant threat to the performance and reliability of the 6T S...
Resistive switching random access memory (RRAM) is a leading candidate for next-generation nonvolati...
Phase-change random access memory (PCRAM) is an emerging memory technology with attractive features,...
Semiconductor random access memories are complex systems that can be described by performance parame...
Characterizing static random access memories (SRAMs) is difficult but necessary to understandits pro...
Abstract: Memory circuits such as static random-access memory (SRAM) and dynamic random-access memor...
With the development of microprocessor, large-storage and high-speed memories are required to keep u...
A product may fail when design parameters are subject to large deviations. To guarantee yield one li...
In recent years the demand for low power devices has been increases tremendously. To solve the power...
Abstract In this work, we provide a comprehensive discussion on the various models proposed for the ...
Abstract — This paper presents two fast and accurate methods to estimate the lower bound of supply v...
For robust design of SRAM memories, it is not sufficient to guarantee good statistical margins on th...
Resistive switching random access memory (RRAM) is a leading candidate for next-generation nonvolati...
University of Minnesota Ph.D. dissertation. July 2010. Major: Electrical Engineering. Advisor: Sachi...
It has been shown that sub 100nm SRAM is particularly sensitive to stochastic device variability. In...
Abstract—Process variation poses a significant threat to the performance and reliability of the 6T S...
Resistive switching random access memory (RRAM) is a leading candidate for next-generation nonvolati...
Phase-change random access memory (PCRAM) is an emerging memory technology with attractive features,...
Semiconductor random access memories are complex systems that can be described by performance parame...