Spin transfer torque magnetic RAM (STT-MRAM) technology is one of the most promising alternative for static RAM (SRAM) for implementing on-chip memories. Compared with SRAMs, STT-MRAMs benefit from higher density and near-zero leakage power, nonetheless they impose high energy consumption for reliable write operations. However, in many applications, absolute data integrity is not required; thus, acting on the current applied in the write operations may represent a novel knob for disciplined approximate computing to obtain energy saving with a minimal quality loss in applications' outputs. This article proposes CAST, a hardware/software approach to adjust the energy/quality of write operations in STT-MRAM caches in multicore systems based on...
International audienceThe most widely used embedded memory technology, SRAM (Static Random Access Me...
Power consumption is becoming one of the most important constraints in the VLSI field in nano-meter ...
Spin-Transfer Torque Random Access Memory (STT-RAM) has been proved a promising emerging nonvolatile...
Spin transfer torque magnetic RAM (STT-MRAM) technology is one of the most promising alternative for...
Modern architectures adopt large on-chip cache memory hierarchies with more than two levels. While t...
Energy efficiency has become one of the primary considerations in the designs of cyber-physical syst...
International audienceEnergy-efficiency is one of the most challenging design issues in both embedde...
International audienceMemories are currently a real bottleneck to design high speed and energy-effic...
Spin-Transfer Torque Random Access Memory (STT-RAM) has been identified as an advantageous candidate...
In the recent times, various challenges are being encountered during SRAM cache design and developme...
In the memory hierarchy of computer systems, the traditional semiconductor memories Static RAM (SRAM...
Static random access memory (SRAM) is the most commonly employed semiconductor in the design of on-c...
Spin-transfer torque magnetic random access memories (STT-MRAMs) based on magnetic tunnel junction (...
Magnetic memory technologies are very promising candidates to be universal memory due to its good sc...
In recent times, various challenges have been encountered in the design and development of SRAM cach...
International audienceThe most widely used embedded memory technology, SRAM (Static Random Access Me...
Power consumption is becoming one of the most important constraints in the VLSI field in nano-meter ...
Spin-Transfer Torque Random Access Memory (STT-RAM) has been proved a promising emerging nonvolatile...
Spin transfer torque magnetic RAM (STT-MRAM) technology is one of the most promising alternative for...
Modern architectures adopt large on-chip cache memory hierarchies with more than two levels. While t...
Energy efficiency has become one of the primary considerations in the designs of cyber-physical syst...
International audienceEnergy-efficiency is one of the most challenging design issues in both embedde...
International audienceMemories are currently a real bottleneck to design high speed and energy-effic...
Spin-Transfer Torque Random Access Memory (STT-RAM) has been identified as an advantageous candidate...
In the recent times, various challenges are being encountered during SRAM cache design and developme...
In the memory hierarchy of computer systems, the traditional semiconductor memories Static RAM (SRAM...
Static random access memory (SRAM) is the most commonly employed semiconductor in the design of on-c...
Spin-transfer torque magnetic random access memories (STT-MRAMs) based on magnetic tunnel junction (...
Magnetic memory technologies are very promising candidates to be universal memory due to its good sc...
In recent times, various challenges have been encountered in the design and development of SRAM cach...
International audienceThe most widely used embedded memory technology, SRAM (Static Random Access Me...
Power consumption is becoming one of the most important constraints in the VLSI field in nano-meter ...
Spin-Transfer Torque Random Access Memory (STT-RAM) has been proved a promising emerging nonvolatile...