Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures
- Sari, E.
- Akyuz O.
- Choi, E.-G.
- Lee I.-H.
- Baek J.H.
- Demir, H. V.
Publication date
January 2010
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
Crystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for reducing dislocation density in GaN and its alloys [1,2]. Implementation and design of ELO process is, however, critical for obtaining high-quality material with high-efficiency quantum structures for light emitters [3]. ©2010 IEEE
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