Add to ORKGPhotoresponse measurements were carried out in the 1100-1500 nm range by using a single-pass monochromator and a tungsten-halogen projection lamp as the light source. Further, high-speed measurements were made with an optical parametric oscillator (OPO). In general, the results correspond to the first high-speed internal photoemission photodetectors
Cataloged from PDF version of article.We report the fabrication and testing of a GaAs-based high-spe...
Abstract-An ultrafast GaAs Schottky pbotodiode is mono-litbically integrated with an aJl-electronic ...
Various emerging applications such as high-performance computing (HPC) have been pushing the speed l...
We report GaAs-based high-speed, resonant-cavity-enhanced, Schottky barrier internal photoemission p...
Cataloged from PDF version of article.High-speed photodetectors operating at 1.3 and 1.55 mu m are i...
High-speed InGaAs based resonant cavity enhanced photodiodes were discussed. The responses of the ph...
High-speed photodetectors operating at 1.3 and 1.55 μm are important for long distance fiber optic b...
GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorptio...
Abstract—We report p-i-n type InSb-based high-speed photode-tectors grown on GaAs substrate. Electri...
The 1.55 μm high-speed operation of GaAs-based p-i-n photodiodes was demonstrated and their design, ...
In this paper, we review our research efforts on resonant cavity enhanced (RCE) high-speed high-effi...
A high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insu...
In this paper, we present four photodetector devices that have the benefit of compatibility with est...
Abstract—Resonant cavity enhanced (RCE) photodiodes are promising candidates for applications in opt...
A high speed and high efficiency resonant cavity enhanced InGaAs based photodetector was demonstrate...
Cataloged from PDF version of article.We report the fabrication and testing of a GaAs-based high-spe...
Abstract-An ultrafast GaAs Schottky pbotodiode is mono-litbically integrated with an aJl-electronic ...
Various emerging applications such as high-performance computing (HPC) have been pushing the speed l...
We report GaAs-based high-speed, resonant-cavity-enhanced, Schottky barrier internal photoemission p...
Cataloged from PDF version of article.High-speed photodetectors operating at 1.3 and 1.55 mu m are i...
High-speed InGaAs based resonant cavity enhanced photodiodes were discussed. The responses of the ph...
High-speed photodetectors operating at 1.3 and 1.55 μm are important for long distance fiber optic b...
GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorptio...
Abstract—We report p-i-n type InSb-based high-speed photode-tectors grown on GaAs substrate. Electri...
The 1.55 μm high-speed operation of GaAs-based p-i-n photodiodes was demonstrated and their design, ...
In this paper, we review our research efforts on resonant cavity enhanced (RCE) high-speed high-effi...
A high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insu...
In this paper, we present four photodetector devices that have the benefit of compatibility with est...
Abstract—Resonant cavity enhanced (RCE) photodiodes are promising candidates for applications in opt...
A high speed and high efficiency resonant cavity enhanced InGaAs based photodetector was demonstrate...
Cataloged from PDF version of article.We report the fabrication and testing of a GaAs-based high-spe...
Abstract-An ultrafast GaAs Schottky pbotodiode is mono-litbically integrated with an aJl-electronic ...
Various emerging applications such as high-performance computing (HPC) have been pushing the speed l...