Add to ORKGWe have studied the HfO 2/Hf and HfO 2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively
The electronic structure and band alignment at metal/oxide interfaces for nonvolatile memory applica...
The Pt/GaP(110) interface has been studied by core and valence level photoemission using synchrotron...
The alignment between the energy levels of the constituent materials of metal-oxide-semiconductor fi...
First principles calculations of the impact of Te local doping on the effective work function of a M...
The work at KU Leuven was supported by Fonds Wetenschappelijk Onderzoek – Vlaanderen (Project G.0C05...
First principles calculations of the impact of Te local doping on the effective work function of a M...
Change in the work function (WF) of the gate electrode material caused by the contact with Hf-based ...
Soft X-Ray Photoemission Spectroscopy using surface sensitive Synchrotron Radiation has been applied...
We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectr...
MOS devices based on III-V semiconductors and thin high-k dielectric layers offer possibilities for ...
The valence and conduction band densities of states for the HfO 2/SiO 2/Si structure are determined ...
The function of approximate to 3-nm thick lithium fluoride (LiF) buffer layers in combination with h...
Thanks to its good thermal stability, including resistance to oxidation, platinum (Pt) is widely use...
The article overviews experimental results obtained by applying internal photoemission (IPE) spectro...
The thermal stability and band alignment of HfO2 thin film grown by atomic layer deposition (ALD) we...
The electronic structure and band alignment at metal/oxide interfaces for nonvolatile memory applica...
The Pt/GaP(110) interface has been studied by core and valence level photoemission using synchrotron...
The alignment between the energy levels of the constituent materials of metal-oxide-semiconductor fi...
First principles calculations of the impact of Te local doping on the effective work function of a M...
The work at KU Leuven was supported by Fonds Wetenschappelijk Onderzoek – Vlaanderen (Project G.0C05...
First principles calculations of the impact of Te local doping on the effective work function of a M...
Change in the work function (WF) of the gate electrode material caused by the contact with Hf-based ...
Soft X-Ray Photoemission Spectroscopy using surface sensitive Synchrotron Radiation has been applied...
We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectr...
MOS devices based on III-V semiconductors and thin high-k dielectric layers offer possibilities for ...
The valence and conduction band densities of states for the HfO 2/SiO 2/Si structure are determined ...
The function of approximate to 3-nm thick lithium fluoride (LiF) buffer layers in combination with h...
Thanks to its good thermal stability, including resistance to oxidation, platinum (Pt) is widely use...
The article overviews experimental results obtained by applying internal photoemission (IPE) spectro...
The thermal stability and band alignment of HfO2 thin film grown by atomic layer deposition (ALD) we...
The electronic structure and band alignment at metal/oxide interfaces for nonvolatile memory applica...
The Pt/GaP(110) interface has been studied by core and valence level photoemission using synchrotron...
The alignment between the energy levels of the constituent materials of metal-oxide-semiconductor fi...