The effects of surface treatment on optical and vibrational properties of porous silicon. (por-Si) layers grown on p-type Si wafers by electroless etching technique were studied by FTIR spectroscopy and photoluminescence (PL). The results indicate a correlatiora between the PL intensity and the strength of the absorption bands induced by mulltihydride complexes (SiHn, n ≥ 2). However, similar correlation was also established for monohydride species as evidenced from the layers containing no multihydrides. Furthermore, a new band is observed at 710 cm-1 and assigned to multihydrides suggesting a ne it, local bonding environment in these layers. © 1995
The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were exam...
Luminescent porous silicon (Psi) fabricated by simple chemical etching technique in different organi...
The room temperature, visible light emission from porous silicon is an unexpected and poorly underst...
Porous Si (PS) layers are prepared by stain etching in a HF/NaNO2 solution on both p- and n-type cry...
117 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.Metal-assisted electroless et...
117 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.Metal-assisted electroless et...
The PL intensity increases at first, then, decreases with the increase of processing time and reache...
Silicon epitaxial wafers, consisting of 280 mu m thick n-type substrate layer and 4-5 mu m thick epi...
Light‐emitting porous silicon films have been obtained by anodic etching p‐type Si samples in a HF‐e...
Light-emitting porous silicon films have been obtained by anodic etching p-type Si samples in a HF-e...
Light\u2010emitting porous silicon films have been obtained by anodic etching p\u2010type Si samples...
Basic research on the luminescence of porous silicon obtained in an etching process revealed a direc...
Porous silicon (PS) films were prepared by lateral anodization of crystalline silicon in HF based so...
In this paper, porous silicon layers was prepared from p-type silicon with orientation (100) by elec...
Silicon epitaxial wafers, consisting of 280 μm thick n-type substrate layer and 4–5 μm thick epitaxi...
The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were exam...
Luminescent porous silicon (Psi) fabricated by simple chemical etching technique in different organi...
The room temperature, visible light emission from porous silicon is an unexpected and poorly underst...
Porous Si (PS) layers are prepared by stain etching in a HF/NaNO2 solution on both p- and n-type cry...
117 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.Metal-assisted electroless et...
117 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.Metal-assisted electroless et...
The PL intensity increases at first, then, decreases with the increase of processing time and reache...
Silicon epitaxial wafers, consisting of 280 mu m thick n-type substrate layer and 4-5 mu m thick epi...
Light‐emitting porous silicon films have been obtained by anodic etching p‐type Si samples in a HF‐e...
Light-emitting porous silicon films have been obtained by anodic etching p-type Si samples in a HF-e...
Light\u2010emitting porous silicon films have been obtained by anodic etching p\u2010type Si samples...
Basic research on the luminescence of porous silicon obtained in an etching process revealed a direc...
Porous silicon (PS) films were prepared by lateral anodization of crystalline silicon in HF based so...
In this paper, porous silicon layers was prepared from p-type silicon with orientation (100) by elec...
Silicon epitaxial wafers, consisting of 280 μm thick n-type substrate layer and 4–5 μm thick epitaxi...
The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were exam...
Luminescent porous silicon (Psi) fabricated by simple chemical etching technique in different organi...
The room temperature, visible light emission from porous silicon is an unexpected and poorly underst...