We calculate the band-gap renormalization in quasi-one-dimensional semiconductor quantum wires including carrier-carrier and carrier-phonon interactions. We use the quasistatic approximation to obtain the self-energies at the band edge that define the band-gap renormalization. The random-phase approximation at finite temperature is employed to describe the screening effects. We find that confined LO-phonon modes through their interaction with the electrons and holes modify the band gap significantly and produce a larger value than the static ∈0 approximation
The carrier density dependence and the temporal evolution of the ground level parameters of a quasi-...
By using a Monte Carlo analysis of the carrier relaxation in GaAs quantum wires following laser phot...
Quantum wire lasers are expected to require very low threshold currents owing to the nature of the 1...
We study the effects of screening on polaronic corrections to the effective band edge in a quasi-one...
We consider the different approximations for the bandgap renormalization (BGR) within the random pha...
We study the band-gap renormalization m a model semiconductor quantum wire due to the exchange-corre...
We investigate the effects of screening on polaronic corrections to the effective band edge in photo...
We present a fully dynamical and finite temperature study of the hot-electron momentum relaxation ra...
We study the effects of dielectric screening on the scattering and relaxation rates due to electron-...
Non-linear optical properties of photoexcited semiconductor quantum-wells are of interest because of...
Improved techniques in semiconductor fabrication increased the interest in quantum wire structures, ...
By considering a suitable confinement potential, we calculate the exchange-correlation induced band ...
The author studies the effects of dielectric screening on scattering rates due to electron-phonon in...
We investigate the band-gap renormalization due to electron-electron interaction in the n-type doped...
We study the contribution of confined and interface phonons to the polaron energy in quantum-well wi...
The carrier density dependence and the temporal evolution of the ground level parameters of a quasi-...
By using a Monte Carlo analysis of the carrier relaxation in GaAs quantum wires following laser phot...
Quantum wire lasers are expected to require very low threshold currents owing to the nature of the 1...
We study the effects of screening on polaronic corrections to the effective band edge in a quasi-one...
We consider the different approximations for the bandgap renormalization (BGR) within the random pha...
We study the band-gap renormalization m a model semiconductor quantum wire due to the exchange-corre...
We investigate the effects of screening on polaronic corrections to the effective band edge in photo...
We present a fully dynamical and finite temperature study of the hot-electron momentum relaxation ra...
We study the effects of dielectric screening on the scattering and relaxation rates due to electron-...
Non-linear optical properties of photoexcited semiconductor quantum-wells are of interest because of...
Improved techniques in semiconductor fabrication increased the interest in quantum wire structures, ...
By considering a suitable confinement potential, we calculate the exchange-correlation induced band ...
The author studies the effects of dielectric screening on scattering rates due to electron-phonon in...
We investigate the band-gap renormalization due to electron-electron interaction in the n-type doped...
We study the contribution of confined and interface phonons to the polaron energy in quantum-well wi...
The carrier density dependence and the temporal evolution of the ground level parameters of a quasi-...
By using a Monte Carlo analysis of the carrier relaxation in GaAs quantum wires following laser phot...
Quantum wire lasers are expected to require very low threshold currents owing to the nature of the 1...