Charging of oxide films under x rays is an important issue that must be taken into consideration for determination of core-level binding energies as well as valence band offsets. Measurements are taken as a function of time, thickness, and annealing condition. Photoemission results show the presence of metallic Hf with the 4f7/2 binding energy of 18.16 eV, and at least one clear suboxide peak
Cataloged from PDF version of article.Soft x-ray photoelectron spectroscopy with synchrotron radiati...
DAAD - DEUTSCHER AKADEMISCHER AUSTAUSCHDIENSTCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL E NÍV...
[[abstract]]The depth profile of the HfO2/Si interface grown by molecular beam epitaxy (MBE) has bee...
Soft X-Ray Photoemission Spectroscopy using surface sensitive Synchrotron Radiation has been applied...
The atomic structure of amorphous and crystalline hafnium oxide ͑HfO 2 ͒ films was examined using x-...
We investigated the unoccupied part of the electronic structure of the oxygen-deficient hafnium oxid...
Thin layers of HfO2 grown on the (1 0 0) Si crystal surface using atomic layer deposition or metallo...
Thin layers of HfO2 grown on the 1 amp; 8201;0 amp; 8201;0 Si crystal surface using atomic layer de...
In this work amorphous hafnium oxide thin films with varying oxygen deficiency were prepared at room...
Perturbed angular correlation studies on Hafnium foil subjected to annealing in oxygen atmosphere sh...
The chemical bonding of O atoms in HfO2 films on Si was investigated by in situ x-ray photoelectron ...
Rapid thermal annealing at 1000 °C of (HfO2)12x(SiO2)x pseudobinary alloy films deposited on Si were...
Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si substrates u...
Atomic layer deposition (ALD) is a cyclic growth process that is distinguished by a self-limiting, t...
We have investigated the microstructures and electronic structures of a series of hafnium aluminate ...
Cataloged from PDF version of article.Soft x-ray photoelectron spectroscopy with synchrotron radiati...
DAAD - DEUTSCHER AKADEMISCHER AUSTAUSCHDIENSTCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL E NÍV...
[[abstract]]The depth profile of the HfO2/Si interface grown by molecular beam epitaxy (MBE) has bee...
Soft X-Ray Photoemission Spectroscopy using surface sensitive Synchrotron Radiation has been applied...
The atomic structure of amorphous and crystalline hafnium oxide ͑HfO 2 ͒ films was examined using x-...
We investigated the unoccupied part of the electronic structure of the oxygen-deficient hafnium oxid...
Thin layers of HfO2 grown on the (1 0 0) Si crystal surface using atomic layer deposition or metallo...
Thin layers of HfO2 grown on the 1 amp; 8201;0 amp; 8201;0 Si crystal surface using atomic layer de...
In this work amorphous hafnium oxide thin films with varying oxygen deficiency were prepared at room...
Perturbed angular correlation studies on Hafnium foil subjected to annealing in oxygen atmosphere sh...
The chemical bonding of O atoms in HfO2 films on Si was investigated by in situ x-ray photoelectron ...
Rapid thermal annealing at 1000 °C of (HfO2)12x(SiO2)x pseudobinary alloy films deposited on Si were...
Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si substrates u...
Atomic layer deposition (ALD) is a cyclic growth process that is distinguished by a self-limiting, t...
We have investigated the microstructures and electronic structures of a series of hafnium aluminate ...
Cataloged from PDF version of article.Soft x-ray photoelectron spectroscopy with synchrotron radiati...
DAAD - DEUTSCHER AKADEMISCHER AUSTAUSCHDIENSTCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL E NÍV...
[[abstract]]The depth profile of the HfO2/Si interface grown by molecular beam epitaxy (MBE) has bee...