High quality graphene-metal contacts are desirable for high-performance graphene based electronics. Process related factors result large variation in the contact resistance. A post-processing method is needed to improve graphene-metal contacts. In this letter, we studied rapid thermal annealing (RTA) of graphene-metal contacts. We present results of a systematic investigation of device scaling before and after RTA for various metals. The results reveal that RTA provides a convenient technique to reduce contact resistance, thus to obtain reproducible device operation. © 2012 American Institute of Physics
We investigate the influence of annealing on the properties of a contact between graphene and metal ...
Performance of graphene electronics is limited by contact resistance associated with the metal–graph...
The contact resistance between graphene and metal electrodes is crucial for the achievement of high-...
Cataloged from PDF version of article.High quality graphene-metal contacts are desirable for high-pe...
In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer...
We present transfer-length-method measurements of the contact resistance be-tween Cu and graphene, a...
Annealing is a postprocessing treatment commonly used to improve metal–graphene contacts with the as...
FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOGraphene is a very promising material f...
The effects of contact architecture, graphene defect density and metal-semiconductor work function d...
Contact resistance between electrically connected parts of electronic elements can negatively affect...
The performance of devices and systems based on two-dimensional material systems depends critically ...
Metal/graphene contact resistance is becoming a major limiting factor in the creation of graphene de...
The extremely high carrier mobility and the unique band structure, make graphene very useful for fie...
Realizing low contact resistance between graphene and metal electrodes remains a well-known challeng...
A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer...
We investigate the influence of annealing on the properties of a contact between graphene and metal ...
Performance of graphene electronics is limited by contact resistance associated with the metal–graph...
The contact resistance between graphene and metal electrodes is crucial for the achievement of high-...
Cataloged from PDF version of article.High quality graphene-metal contacts are desirable for high-pe...
In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer...
We present transfer-length-method measurements of the contact resistance be-tween Cu and graphene, a...
Annealing is a postprocessing treatment commonly used to improve metal–graphene contacts with the as...
FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOGraphene is a very promising material f...
The effects of contact architecture, graphene defect density and metal-semiconductor work function d...
Contact resistance between electrically connected parts of electronic elements can negatively affect...
The performance of devices and systems based on two-dimensional material systems depends critically ...
Metal/graphene contact resistance is becoming a major limiting factor in the creation of graphene de...
The extremely high carrier mobility and the unique band structure, make graphene very useful for fie...
Realizing low contact resistance between graphene and metal electrodes remains a well-known challeng...
A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer...
We investigate the influence of annealing on the properties of a contact between graphene and metal ...
Performance of graphene electronics is limited by contact resistance associated with the metal–graph...
The contact resistance between graphene and metal electrodes is crucial for the achievement of high-...