As technology moves towards finer process geometries, it is becoming extremely difficult to control critical physical parameters such as channel length, gate oxide thickness, and dopant ion concentration. Variations in these parameters lead to dramatic variations in access latencies in Static Random Access Memory (SRAM) devices. This means that different lines of the same cache may have different access latencies. A simple solution to this problem is to adopt the worst-case latency paradigm. While this egalitarian cache management is simple, it may introduce significant performance overhead during instruction fetches when both address translation (instruction Translation Lookaside Buffer (TLB) access) and instruction cache access take place...
Process variations in integrated circuits have significant impact on their performance, leakage and ...
High instruction fetch bandwidth is essential for high performance in today’s wide-issue outof-order...
This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semi...
Cataloged from PDF version of article.As technology moves towards finer process geometries, it is be...
The design of higher performance processors has been following two major trends: increasing the pipe...
The design of higher performance processors has been following two major trends: increasing the pipe...
As transistor feature sizes continue to shrink into the sub-90nm range and beyond, the effects of pr...
Processor performance is directly impacted by the latency of the memory system. As processor core cy...
It is well known that memory latency is a major deterrent to achieving the maximum possible performa...
We explore the use of compiler optimizations, which optimize the layout of instructions in memory. T...
grantor: University of TorontoThe latency of accessing instructions and data from the memo...
Instruction cache miss latency is becoming an increasingly important performance bottleneck, especia...
Journal ArticleModern superscalar processors use wide instruction issue widths and out-of-order exe...
It is getting increasingly difficult to verify processors and guarantee subsequent reliable operatio...
Programs exhibit significant performance variance in their access to microarchitectural structures. ...
Process variations in integrated circuits have significant impact on their performance, leakage and ...
High instruction fetch bandwidth is essential for high performance in today’s wide-issue outof-order...
This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semi...
Cataloged from PDF version of article.As technology moves towards finer process geometries, it is be...
The design of higher performance processors has been following two major trends: increasing the pipe...
The design of higher performance processors has been following two major trends: increasing the pipe...
As transistor feature sizes continue to shrink into the sub-90nm range and beyond, the effects of pr...
Processor performance is directly impacted by the latency of the memory system. As processor core cy...
It is well known that memory latency is a major deterrent to achieving the maximum possible performa...
We explore the use of compiler optimizations, which optimize the layout of instructions in memory. T...
grantor: University of TorontoThe latency of accessing instructions and data from the memo...
Instruction cache miss latency is becoming an increasingly important performance bottleneck, especia...
Journal ArticleModern superscalar processors use wide instruction issue widths and out-of-order exe...
It is getting increasingly difficult to verify processors and guarantee subsequent reliable operatio...
Programs exhibit significant performance variance in their access to microarchitectural structures. ...
Process variations in integrated circuits have significant impact on their performance, leakage and ...
High instruction fetch bandwidth is essential for high performance in today’s wide-issue outof-order...
This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semi...