Cataloged from PDF version of article.High quality graphene-metal contacts are desirable for high-performance graphene based electronics. Process related factors result large variation in the contact resistance. A post-processing method is needed to improve graphene-metal contacts. In this letter, we studied rapid thermal annealing (RTA) of graphene-metal contacts. We present results of a systematic investigation of device scaling before and after RTA for various metals. The results reveal that RTA provides a convenient technique to reduce contact resistance, thus to obtain reproducible device operation. (C) 2012 American Institute of Physics
Realizing low contact resistance between graphene and metal electrodes remains a well-known challeng...
In the first part of this thesis, I present the results of my investigation of thermal characteristi...
A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer...
High quality graphene-metal contacts are desirable for high-performance graphene based electronics. ...
In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer...
FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOGraphene is a very promising material f...
Annealing is a postprocessing treatment commonly used to improve metal–graphene contacts with the as...
We present transfer-length-method measurements of the contact resistance be-tween Cu and graphene, a...
The effects of contact architecture, graphene defect density and metal-semiconductor work function d...
In this thesis, the contact resistance of graphene devices was investigated because high contact res...
The performance of devices and systems based on two-dimensional material systems depends critically ...
Metal/graphene contact resistance is becoming a major limiting factor in the creation of graphene de...
The extremely high carrier mobility and the unique band structure, make graphene very useful for fie...
Contact resistance between electrically connected parts of electronic elements can negatively affect...
The large graphene-metal contact resistance is a major limitation for development of graphene electr...
Realizing low contact resistance between graphene and metal electrodes remains a well-known challeng...
In the first part of this thesis, I present the results of my investigation of thermal characteristi...
A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer...
High quality graphene-metal contacts are desirable for high-performance graphene based electronics. ...
In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer...
FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOGraphene is a very promising material f...
Annealing is a postprocessing treatment commonly used to improve metal–graphene contacts with the as...
We present transfer-length-method measurements of the contact resistance be-tween Cu and graphene, a...
The effects of contact architecture, graphene defect density and metal-semiconductor work function d...
In this thesis, the contact resistance of graphene devices was investigated because high contact res...
The performance of devices and systems based on two-dimensional material systems depends critically ...
Metal/graphene contact resistance is becoming a major limiting factor in the creation of graphene de...
The extremely high carrier mobility and the unique band structure, make graphene very useful for fie...
Contact resistance between electrically connected parts of electronic elements can negatively affect...
The large graphene-metal contact resistance is a major limitation for development of graphene electr...
Realizing low contact resistance between graphene and metal electrodes remains a well-known challeng...
In the first part of this thesis, I present the results of my investigation of thermal characteristi...
A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer...