Cataloged from PDF version of article.The AlxIn1-xN barrier high electron mobility transistor (HEMT) structure has been optimized with varied barrier composition and thickness grown by metalorganic chemical vapor deposition. After optimization, a transistor structure comprising a 7 nm thick nearly lattice-matched Al0.83In0.17 N barrier exhibits a sheet electron density of 2.0 x 10(13) cm(-2) with a high electron mobility of 1540 cm(2) V-1 s(-1). AnAl(0.83)In(0.17)N barrier HEMT device with 1 mu m gate length provides a current density of 1.0 A mm(-1) at V-GS = 0 V and an extrinsic transconductance of 242 mS mm(-1), which are remarkably improved compared to that of a conventional Al0.3Ga0.7N barrier HEMT. To investigate the thermal stability...
Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) str...
Cataloged from PDF version of article.AlxGa1-xN/GaN (x similar to 0.3) heterostructures with and wit...
Cataloged from PDF version of article.The electron transport properties in Al0.25Ga0.75N/AlN/GaN/Inx...
The AlxIn1-xN barrier high electron mobility transistor (HEMT) structure has been optimized with var...
Cataloged from PDF version of article.We investigate the structural and electrical properties of Alx...
Cataloged from PDF version of article.The transport properties of high mobility AlGaN/AlN/GaN and hi...
Cataloged from PDF version of article.We report the remarkably improved crystal quality of semi-insu...
Semi-insulating character (sheet resistivity of 3.26 × 10 11 Ω/sq) of thick GaN layers was developed...
Cataloged from PDF version of article.Al0.31Ga0.69N/AlN/GaN/InxGa1-xN/GaN heterostructures grown wit...
We investigate the structural and electrical properties of Al xIn 1-xN/AlN/GaN heterostructures with...
Cataloged from PDF version of article.The effects of the In-mole fraction (x) of an InxGa1-xN back b...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
AlGaN/GaN based high electron mobility transistors (HEMTs) are excellent for high-frequency and high...
Cataloged from PDF version of article.We present a study on the high performance p-type AlxGa1-xN (x...
The use of InAlN as barrier layer material is considered as promising idea to enhance the high frequ...
Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) str...
Cataloged from PDF version of article.AlxGa1-xN/GaN (x similar to 0.3) heterostructures with and wit...
Cataloged from PDF version of article.The electron transport properties in Al0.25Ga0.75N/AlN/GaN/Inx...
The AlxIn1-xN barrier high electron mobility transistor (HEMT) structure has been optimized with var...
Cataloged from PDF version of article.We investigate the structural and electrical properties of Alx...
Cataloged from PDF version of article.The transport properties of high mobility AlGaN/AlN/GaN and hi...
Cataloged from PDF version of article.We report the remarkably improved crystal quality of semi-insu...
Semi-insulating character (sheet resistivity of 3.26 × 10 11 Ω/sq) of thick GaN layers was developed...
Cataloged from PDF version of article.Al0.31Ga0.69N/AlN/GaN/InxGa1-xN/GaN heterostructures grown wit...
We investigate the structural and electrical properties of Al xIn 1-xN/AlN/GaN heterostructures with...
Cataloged from PDF version of article.The effects of the In-mole fraction (x) of an InxGa1-xN back b...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
AlGaN/GaN based high electron mobility transistors (HEMTs) are excellent for high-frequency and high...
Cataloged from PDF version of article.We present a study on the high performance p-type AlxGa1-xN (x...
The use of InAlN as barrier layer material is considered as promising idea to enhance the high frequ...
Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) str...
Cataloged from PDF version of article.AlxGa1-xN/GaN (x similar to 0.3) heterostructures with and wit...
Cataloged from PDF version of article.The electron transport properties in Al0.25Ga0.75N/AlN/GaN/Inx...