Using the contactless microwave phase-shift technique (μ W-PS) and High Resolution Transmission Electron Microscopy (HRTEM), we show that the twist and mixed parts of a Σ = 51(θ = 16.10∘) grain boundary in germanium (Ge) are electrically active. We also show that we can passivate the electrically active grain boundaries by sulfur segregation which has been studied by energy filtering HRTEM. Atomistic simulations show that the most favorable places for this segregation are the high energy sites of grain boundar
The electrical properties of polycrystalline semiconductors are strongly related to their intergranu...
There is a renewed interest in the electrical activity at grain boundaries in relation to the outsta...
Measurements by atomic force microscopy reported for a polycrystalline CeRhSn sample show nanometer-...
Using the contactless microwave phase-shift technique (μ W-PS) and High Resolution Transmission Elec...
L'observation en mode EBIC du Microscope Electronique à Balayage a été utilisée pour caractériser l'...
The electrical activity of grain boundaries in polycrystalline germanium has been studied from SEM/E...
This paper summarizes the electron microscope observations (high resolution, diffraction and α-fring...
SEM/EBIC technique has been used recently to investigate both bulk and grain boundaries (GBs) electr...
The electronic defect states of a near-coincidence SIGMA-9 tilt grain boundary (GB) in germanium is ...
The electronic defect states of near SIGMA-17 and SIGMA-41 tilt grain boundaries (GBs) in germanium ...
Résumé.- Les joints de grains des isolants, des semiconducteurs et des métaux pré-sentent des propri...
The behavior of semiconductors is affected by the presence and distribution of dopants. The properti...
This review presents the available experimental and theoretical understanding on the structure and e...
Structures, energies, and electronic properties of symmetric [001] tilt grain boundaries in Si have ...
Interest in grain boundaries in semiconductors is linked to the application of polycrystalline semic...
The electrical properties of polycrystalline semiconductors are strongly related to their intergranu...
There is a renewed interest in the electrical activity at grain boundaries in relation to the outsta...
Measurements by atomic force microscopy reported for a polycrystalline CeRhSn sample show nanometer-...
Using the contactless microwave phase-shift technique (μ W-PS) and High Resolution Transmission Elec...
L'observation en mode EBIC du Microscope Electronique à Balayage a été utilisée pour caractériser l'...
The electrical activity of grain boundaries in polycrystalline germanium has been studied from SEM/E...
This paper summarizes the electron microscope observations (high resolution, diffraction and α-fring...
SEM/EBIC technique has been used recently to investigate both bulk and grain boundaries (GBs) electr...
The electronic defect states of a near-coincidence SIGMA-9 tilt grain boundary (GB) in germanium is ...
The electronic defect states of near SIGMA-17 and SIGMA-41 tilt grain boundaries (GBs) in germanium ...
Résumé.- Les joints de grains des isolants, des semiconducteurs et des métaux pré-sentent des propri...
The behavior of semiconductors is affected by the presence and distribution of dopants. The properti...
This review presents the available experimental and theoretical understanding on the structure and e...
Structures, energies, and electronic properties of symmetric [001] tilt grain boundaries in Si have ...
Interest in grain boundaries in semiconductors is linked to the application of polycrystalline semic...
The electrical properties of polycrystalline semiconductors are strongly related to their intergranu...
There is a renewed interest in the electrical activity at grain boundaries in relation to the outsta...
Measurements by atomic force microscopy reported for a polycrystalline CeRhSn sample show nanometer-...