Add to ORKG4pages, 4 figuresWe investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a novel switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realisation of a novel type of strongly correlated electron device
Electron tunneling in ferritin and between ferritin cores (a transition metal (iron) oxide storage p...
In this work the conduction mechanism of resistive switching devices is investigated, which could be...
Due to their superior scalability and performance, nanoscale resistive switches based on the valence...
4pages, 4 figuresWe investigate hysteresis effects in a model for non-volatile memory devices. Two m...
We investigate hysteresis effects in a model for nonvolatile memory devices. Two mechanisms are foun...
The behavior of a model for non-volatile electronic memory devices with strongly correlated material...
Hysteretic resistance effects based on a correlation between ferroelectric polarization and conducti...
International audienceResistive switching effects offer new opportunities in the field of convention...
International audienceResistive random access memories (ReRAM) form an emerging type of non-volatile...
A survey of non-volatile. highly scalable memory devices which utilize dedicated resistive switching...
The operation of a novel, nonvolatile memory device based on a conductive ferroelectric/semiconducto...
The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has ...
Resistive switching effect in transition metal oxide (TMO) based material is often associated with t...
Multilevel resistance states in silver-manganite interfaces are studied both experimentally and thro...
Electrically driven switching of resistance states is observed in a system prepared by depositing Co...
Electron tunneling in ferritin and between ferritin cores (a transition metal (iron) oxide storage p...
In this work the conduction mechanism of resistive switching devices is investigated, which could be...
Due to their superior scalability and performance, nanoscale resistive switches based on the valence...
4pages, 4 figuresWe investigate hysteresis effects in a model for non-volatile memory devices. Two m...
We investigate hysteresis effects in a model for nonvolatile memory devices. Two mechanisms are foun...
The behavior of a model for non-volatile electronic memory devices with strongly correlated material...
Hysteretic resistance effects based on a correlation between ferroelectric polarization and conducti...
International audienceResistive switching effects offer new opportunities in the field of convention...
International audienceResistive random access memories (ReRAM) form an emerging type of non-volatile...
A survey of non-volatile. highly scalable memory devices which utilize dedicated resistive switching...
The operation of a novel, nonvolatile memory device based on a conductive ferroelectric/semiconducto...
The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has ...
Resistive switching effect in transition metal oxide (TMO) based material is often associated with t...
Multilevel resistance states in silver-manganite interfaces are studied both experimentally and thro...
Electrically driven switching of resistance states is observed in a system prepared by depositing Co...
Electron tunneling in ferritin and between ferritin cores (a transition metal (iron) oxide storage p...
In this work the conduction mechanism of resistive switching devices is investigated, which could be...
Due to their superior scalability and performance, nanoscale resistive switches based on the valence...