Tailoring of SiC nanoprecipitates formed in Si
- Velisa, G.
- Trocellier, P.
- Thome, L.
- Vaubaillon, S.
- Miro, S.
- Serruys, Y.
- Bordas, E.
- Meslin, E.
- Mylonas, S.
- E. Coulon, P.
- Lepretre, F.
- Pilz, A.
- Beck, L.
DOIAbstract
International audienceThe SiC synthesis through single-beam of C+, and simultaneous-dual-beam of C+ & Si+ ion implantations into a Si substrate heated at 550 degrees C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C+ & 890-keV Si+) and single-beam (520-keV C+) ion implantations. Their shape appear as spherical (average size similar to 4-5 nm) and they are in epitaxial relationship with the silicon matrix. (C) 2013 Elsevier B.V. All rights reserved
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