International audienceThe authors describe a self-consistent modeling of millimeter-wave diodes (GUNN, IMPATT, and p-i-n) for applications such as power sources or limiters. Particular emphasis is placed on temperature rise within the devices to achieve reliable high-power operation. Circuit loading is also considered for a more realistic description of the operating mode. The proposed CAD (computer-aided design) technique has proved to be an efficient tool leading to the design and realization of high-power high-efficiency W-band sources operating at safe temperature ris
The paper describes design and fabrication of GaAs I()(} mW Gunn diodes for operation at-35 GHz. As ...
Abstract:- One of the main problems of high-power microwave semiconductor electronics is design and ...
Abstract—Design and optimization of Schottky varactor diode frequency multipliers for millimeter and...
This paper presents a very efficient Gunn diode circuit model whose components are determined by a n...
International audienceThe time domain modeling of the operation of a 94-GHz pulsed silicon IMPATT os...
This thesis presents the results of an effort carried out at the University of Michigan directed tow...
Abstract:- On the basis of the numerical model that includes precise electrical and thermal sub-mode...
This is the second part of the two-part article, which summarizes the state-of-the-art results in th...
The limitations and control of pulsed IMPATT diode millimeter-wavelength oscillators are described. ...
International audienceThe RF and thermal behavior of 94-GHz P/sup +/PNN/sup +/ double drift flat dop...
The power capabilities of three different two-terminal devices, GaAs IMPATT diodes, InP Gunn devices...
The design of new millimeter wave monolithic integrated circuits needs the availability of accurate ...
A new type of 94-GHz pulsed silicon impact avalanche and transit time (IMPATT) oscillator numerical ...
This paper describes a theoretical and experimental approach to design near optimum reliable two ter...
The main objective of this project is to create a MMIC component library that can be easily incorpor...
The paper describes design and fabrication of GaAs I()(} mW Gunn diodes for operation at-35 GHz. As ...
Abstract:- One of the main problems of high-power microwave semiconductor electronics is design and ...
Abstract—Design and optimization of Schottky varactor diode frequency multipliers for millimeter and...
This paper presents a very efficient Gunn diode circuit model whose components are determined by a n...
International audienceThe time domain modeling of the operation of a 94-GHz pulsed silicon IMPATT os...
This thesis presents the results of an effort carried out at the University of Michigan directed tow...
Abstract:- On the basis of the numerical model that includes precise electrical and thermal sub-mode...
This is the second part of the two-part article, which summarizes the state-of-the-art results in th...
The limitations and control of pulsed IMPATT diode millimeter-wavelength oscillators are described. ...
International audienceThe RF and thermal behavior of 94-GHz P/sup +/PNN/sup +/ double drift flat dop...
The power capabilities of three different two-terminal devices, GaAs IMPATT diodes, InP Gunn devices...
The design of new millimeter wave monolithic integrated circuits needs the availability of accurate ...
A new type of 94-GHz pulsed silicon impact avalanche and transit time (IMPATT) oscillator numerical ...
This paper describes a theoretical and experimental approach to design near optimum reliable two ter...
The main objective of this project is to create a MMIC component library that can be easily incorpor...
The paper describes design and fabrication of GaAs I()(} mW Gunn diodes for operation at-35 GHz. As ...
Abstract:- One of the main problems of high-power microwave semiconductor electronics is design and ...
Abstract—Design and optimization of Schottky varactor diode frequency multipliers for millimeter and...