Microstructure and mechanical properties of AlN films obtained by plasma enhanced chemical vapor deposition

International audienceAlN films were prepared with a microwave plasma enhanced chemical vapor deposition reactor working at different process temperatures in order to obtain polycrystalline h0001i oriented films for piezoelectric applications. The films developed were characterized in terms of microstructure, composition, and mechanical properties. Crystalline development and a single orientation were obtained at high temperatures, where at the same time an increase in mechanical intrinsic stresses was observed. Well crystallized h0001i films were obtained at temperature as low as 500 C. Furthermore, the evolution of microstructure with thickness at higher temperatures showed a single h0001i orientation with progressive increase of the texture as the thickness increased. This fact was related with changes in the observed microstructure along the film z-axis, evaluated by high resolution transmission electronic microscopy and selected area electron diffraction. Although orientation dispersion of these films, evidenced by the rocking curves FWHM, remained relatively high ([9), they can be regarded as promising for piezoelectric applications. Annealing tests conducted at relatively high temperatures with films deposited at low temperature indicated that thermal effects have only a major effect during the film growth for the temperature values employed