International audienceIn this letter, we present a characterization method for the determination of the thermal impedance of heterostructure bipolar transistors. The thermal impedance was characterized using low-frequency S-parameter measurements. We will show that our method can be used to characterize the thermal impedance independent of the transistor size
A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar tra...
International audienceThe extraction of the equivalent circuit parameters for bipolar transistors is...
International audienceTransistor's thermal impedance is a parameter of prime importance to predict t...
International audienceIn this letter, we present a characterization method for the determination of ...
International audienceThis paper has two main axis: firstly, we address the experimental characteriz...
International audienceIn this paper, a simple and accurate characterization method of the thermal im...
International audienceThis paper presents a dual approach for a coherent determination and validatio...
This paper presents a new and simple method for characterizing the thermal behavior of Heterojunctio...
Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transist...
This paper presents a new and simple method for characterizing the thermal behavior ofHeterojunction...
Self heating in GaAs based heterojunction bipolar transistors affect the microwave performance and n...
This article deals with thermal impedances of microelectronic components that are useful in Simulati...
semiconductor device measurement; bipolar transistors; heterojunction bipolar transistors; analogue ...
A measurement system comprised of an ultra-low-distortion function generator, lock-in amplifier, and...
A measurement system comprised of an ultra-low-distortion function generator, lock-in amplifier, and...
A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar tra...
International audienceThe extraction of the equivalent circuit parameters for bipolar transistors is...
International audienceTransistor's thermal impedance is a parameter of prime importance to predict t...
International audienceIn this letter, we present a characterization method for the determination of ...
International audienceThis paper has two main axis: firstly, we address the experimental characteriz...
International audienceIn this paper, a simple and accurate characterization method of the thermal im...
International audienceThis paper presents a dual approach for a coherent determination and validatio...
This paper presents a new and simple method for characterizing the thermal behavior of Heterojunctio...
Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transist...
This paper presents a new and simple method for characterizing the thermal behavior ofHeterojunction...
Self heating in GaAs based heterojunction bipolar transistors affect the microwave performance and n...
This article deals with thermal impedances of microelectronic components that are useful in Simulati...
semiconductor device measurement; bipolar transistors; heterojunction bipolar transistors; analogue ...
A measurement system comprised of an ultra-low-distortion function generator, lock-in amplifier, and...
A measurement system comprised of an ultra-low-distortion function generator, lock-in amplifier, and...
A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar tra...
International audienceThe extraction of the equivalent circuit parameters for bipolar transistors is...
International audienceTransistor's thermal impedance is a parameter of prime importance to predict t...