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cwBand
International audienceWe report a comparative study on AlInN/GaN HEMTs on SiC substrates having four different processes and epitaxies. The outstanding performances of such devices will be explained thanks to intensive characterizations: pulsed-IV, [S]-parameters and load-pull at several frequencies from S to Ku bands. The measured transistors with 250nm gate lengths from different wafers delivered in cw: 10.8 W/mm with 60 % associated PAE at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10,24 GHz, and 4.2 W/mm with 43 % associated PAE at 18 GHz
127 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.AlGaN/GaN high electron mobil...
This paper describes highly-efficient GaN/AlGaN HEMT and MMIC power amplifiers for RF-frequencies be...
This paper describes efficient GaN/AlGaN HEMTs and MMICs for L/S-band (1-4 GHz) and X-band frequenci...
International audienceWe report a comparative study on AlInN/GaN HEMTs on SiC substrates having four...
International audienceA study of the electrical performances of AlInN/GaN High Electron Mobility Tra...
International audienceAn intensive electrical characterization of AlInN/GaN HEMT devices is presente...
We report the large-signal performance of high electron mobility transistors (HEMTs) fabricated on G...
The operation of AlGaN/GaN HEMTs on SiC substrate at V-band frequencies (50-75 GHz) is discussed. Bo...
Results from technology and microwave characterization of large periphery Al-GaN/GaN power HEMTs on ...
Results from technology and microwave characterization of large periphery AlGaN/GaN power HEMTs on i...
International audienceInAlN/AlN/GaN high electron mobility transistors (HEMT) show interesting perfo...
We report on the technology and microwave characterization of AlGaN/GaN power HEMTs on SiC substrate...
We report AlGaN-GaN high electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE)...
Wide bandgap devices such as AlGaN/GaN high electron mobility transistors (HEMTs) have emerged as a ...
This work summarizes recent achievements for the use of GaN/AlGaN HEMTs on s.i. SiC substrates for h...
127 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.AlGaN/GaN high electron mobil...
This paper describes highly-efficient GaN/AlGaN HEMT and MMIC power amplifiers for RF-frequencies be...
This paper describes efficient GaN/AlGaN HEMTs and MMICs for L/S-band (1-4 GHz) and X-band frequenci...
International audienceWe report a comparative study on AlInN/GaN HEMTs on SiC substrates having four...
International audienceA study of the electrical performances of AlInN/GaN High Electron Mobility Tra...
International audienceAn intensive electrical characterization of AlInN/GaN HEMT devices is presente...
We report the large-signal performance of high electron mobility transistors (HEMTs) fabricated on G...
The operation of AlGaN/GaN HEMTs on SiC substrate at V-band frequencies (50-75 GHz) is discussed. Bo...
Results from technology and microwave characterization of large periphery Al-GaN/GaN power HEMTs on ...
Results from technology and microwave characterization of large periphery AlGaN/GaN power HEMTs on i...
International audienceInAlN/AlN/GaN high electron mobility transistors (HEMT) show interesting perfo...
We report on the technology and microwave characterization of AlGaN/GaN power HEMTs on SiC substrate...
We report AlGaN-GaN high electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE)...
Wide bandgap devices such as AlGaN/GaN high electron mobility transistors (HEMTs) have emerged as a ...
This work summarizes recent achievements for the use of GaN/AlGaN HEMTs on s.i. SiC substrates for h...
127 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.AlGaN/GaN high electron mobil...
This paper describes highly-efficient GaN/AlGaN HEMT and MMIC power amplifiers for RF-frequencies be...
This paper describes efficient GaN/AlGaN HEMTs and MMICs for L/S-band (1-4 GHz) and X-band frequenci...
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