Efficiency of interface trap generation under hole injections in 2.1 nm thick gate-oxide P-MOSFETs
- Bravaix, Alain
- Goguenheim, Didier
- Revil, Nathalie
- Rubaldo, Laurent
- Vincent, Emmanuel
DOIAbstract
International audienceCarrier injection mechanisms have been compared in surface p-channel metal–oxide–semiconductor field-effect transistors with a 2.1 nm thick gate-oxide. Currents as a function of voltage, I(V), were correlated with a corrected charge-pumping analysis taking into account the tunneling components. Channel hot-hole injection at the gate and drain voltages, |VGS| >=|VDS|, induces damage even at low stress voltage (<1.5 V) in contrast to hot-electron injection which requires much larger field conditions close to the drain avalanche hot electron regime. Hot-hole injection is much efficient for the generation of donor-type interface traps, dNit, than the uniform (direct) tunneling of holes from the inversion layer. No trapping...
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