X-ray study of antiphase domains and their stability in MBE grown GaP on Si.
- Letoublon, A.
- Guo, Weiming
- Cornet, C.
- Boulle, Alexandre
- Veron, M.
- Bondi, Alexandre
- Durand, Olivier
- Rohel, Tony
- Dehaese, Olivier
- Chevalier, Nicolas
- Bertru, Nicolas
- Le Corre, Alain
DOIAbstract
International audience90 and 20 nm thick GaP layers on Si substrate grown by various MBE growth modes are studied. A complete analysis is performed using AFM, TEM imaging and X-ray diffraction giving crucial information on structural defects properties and here particularly on antiphase domains. Thermodynamic evolution of antiphase boundaries is then discussed
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