International audienceA test bench allowing S-parameters measurements from 10 Hz to 40 GHz has been set-up, this set-up has been used to investigate the DC to RF behavior of AlInN/GaN HEMTS. The measurement performed have demonstrated the dispersion effects observed on GaN HEMTS due to trapping effects and proved very useful for in-depth characterization of RF devices
Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN H...
This paper describes a measurement technique suitable for the characterization of GaN-based FET devi...
Nonlinear modeling of GaN HEMTs is a challenging task especially when accurate predictions are desir...
International audienceA test bench allowing S-parameters measurements from 10 Hz to 40 GHz has been ...
International audienceFrequency dispersion of transconductance and output conductance in AlInN/GaN h...
International audienceThis paper presents a characterization method of traps, based on the frequency...
International audienceThis paper presents an original characterization method of trapping phenomena ...
International audienceThe performance of GaN transistors is still limited by physical and fabricatio...
International audienceRF GaN power technologies are emerging for future equipment in the defence, sp...
International audienceThe performance of gallium nitride transistors is still limited by technologic...
International audienceIn this paper, the type, activation energy (Ea) and cross section (σn) of the ...
AlGaN/GaN HFET’s have been analyzed under DC and RF Stimulus in an attempt to analyze the phenomenon...
International audienceThis paper presents a detailed trap investigation based on combined pulsed I/V...
The global surge for ubiquitous mobile communication requiring high speed and high capacity cellular...
Les transistors à haute mobilité d’électrons (HEMTs) en Nitrure de Gallium (GaN) s’affirment aujourd...
Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN H...
This paper describes a measurement technique suitable for the characterization of GaN-based FET devi...
Nonlinear modeling of GaN HEMTs is a challenging task especially when accurate predictions are desir...
International audienceA test bench allowing S-parameters measurements from 10 Hz to 40 GHz has been ...
International audienceFrequency dispersion of transconductance and output conductance in AlInN/GaN h...
International audienceThis paper presents a characterization method of traps, based on the frequency...
International audienceThis paper presents an original characterization method of trapping phenomena ...
International audienceThe performance of GaN transistors is still limited by physical and fabricatio...
International audienceRF GaN power technologies are emerging for future equipment in the defence, sp...
International audienceThe performance of gallium nitride transistors is still limited by technologic...
International audienceIn this paper, the type, activation energy (Ea) and cross section (σn) of the ...
AlGaN/GaN HFET’s have been analyzed under DC and RF Stimulus in an attempt to analyze the phenomenon...
International audienceThis paper presents a detailed trap investigation based on combined pulsed I/V...
The global surge for ubiquitous mobile communication requiring high speed and high capacity cellular...
Les transistors à haute mobilité d’électrons (HEMTs) en Nitrure de Gallium (GaN) s’affirment aujourd...
Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN H...
This paper describes a measurement technique suitable for the characterization of GaN-based FET devi...
Nonlinear modeling of GaN HEMTs is a challenging task especially when accurate predictions are desir...
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