Sub-THz zero-bias detector with high performances based on heterostructure low barrier diode (HLBD)
- Nadar, S.
- Zaknoune, Mohammed
- Wallart, X.
- Coinon, Christophe
- Peytavit, Emilien
- Ducournau, Guillaume
- Gamand, F.
- Thirault, M.
- Werquin, M.
- Jonniau, S.
- Thouvenin, N.
- Gaquière, Christophe
- Vellas, N.
- Lampin, Jean-Francois
Publication date
September 2016
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
International audienceHeterostructure low barrier diode (HLBD) based on AlGaInAs has been designed, fabricated and characterized for zero-bias millimetre-wave detection. Detectors with different heterostructures and various active areas have been tested in order to optimize their characteristics for low-level radiometric detection. We have measured the microwave performances of HLBD from DC to 220 GHz. A responsivity of 1700 V/W for unmatched diodes with a very low differential resistance of 256 Omega has been measured. A noise equivalent power (NEP) of about 1.3 pW/Hz(1/2) was then deduced. These performances make our diode easy to matched with 50 Omega circuits and particularly interesting for low-level sub-THz detection applications
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