Aluminum nitride (AlN), gallium nitride (GaN),and indium nitride (InN) form a family of technologicallyimportant semiconductors of high importance to light-emittingdiodes and high-frequency electronics. Although thinfilms of thesematerials are routinely manufactured by chemical vapor deposition(CVD) and atomic layer deposition (ALD), these methods are farfrom optimal and knowledge of the underlying chemical processesis lacking. In this work, we performed ab initio investigations of thesurface coverage of these materials under an ammonia-richatmosphere. Periodic density functional theory calculations wereused to test the probable surface structures, and their electronicand thermal energies were used to calculate their contribution tothe surf...
The reaction mechanisms of nitrogen containing compounds on semiconductor surfaces and the structure...
Recent developments in the structural analysis of GaN and AlN surfaces are reviewed, and the implica...
The III-nitride semiconductors, including AlN, InN, GaN, and BN have been demonstrated as technologi...
Aluminum nitride (AlN), gallium nitride (GaN),and indium nitride (InN) form a family of technologica...
Indium nitride has many applications as a semiconductor. High quality films of indium nitride can be...
We performed ab initio calculations to study the structure and the relative stability of hydrogenate...
Abstract Since AlGaN offers new opportunities for the development of the solid state ultraviolet (UV...
In recent decades, indium nitride (InN) has been attracting a great deal of attention for its potent...
Group 13 nitrides (AlN, GaN and InN) and their alloys are semiconductor materials with a wide bandga...
The integration of different electronic materials systems together has gained increasing interest in...
Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of...
Gallium nitride (GaN) is a wide bandgap semiconductor with many important applications in optoelectr...
Currently, the optical spectrum of the III-V compound semiconductors has been largely confined, with...
By means of plane wave pseudopotential periodic supercell density functional theory calculations, we...
Experiments were carried out to investigate the feasibility of metalorganic surface chemical adsorpt...
The reaction mechanisms of nitrogen containing compounds on semiconductor surfaces and the structure...
Recent developments in the structural analysis of GaN and AlN surfaces are reviewed, and the implica...
The III-nitride semiconductors, including AlN, InN, GaN, and BN have been demonstrated as technologi...
Aluminum nitride (AlN), gallium nitride (GaN),and indium nitride (InN) form a family of technologica...
Indium nitride has many applications as a semiconductor. High quality films of indium nitride can be...
We performed ab initio calculations to study the structure and the relative stability of hydrogenate...
Abstract Since AlGaN offers new opportunities for the development of the solid state ultraviolet (UV...
In recent decades, indium nitride (InN) has been attracting a great deal of attention for its potent...
Group 13 nitrides (AlN, GaN and InN) and their alloys are semiconductor materials with a wide bandga...
The integration of different electronic materials systems together has gained increasing interest in...
Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of...
Gallium nitride (GaN) is a wide bandgap semiconductor with many important applications in optoelectr...
Currently, the optical spectrum of the III-V compound semiconductors has been largely confined, with...
By means of plane wave pseudopotential periodic supercell density functional theory calculations, we...
Experiments were carried out to investigate the feasibility of metalorganic surface chemical adsorpt...
The reaction mechanisms of nitrogen containing compounds on semiconductor surfaces and the structure...
Recent developments in the structural analysis of GaN and AlN surfaces are reviewed, and the implica...
The III-nitride semiconductors, including AlN, InN, GaN, and BN have been demonstrated as technologi...