Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge

Controlling Dopant Distributions and Structures in Advanced Semiconductors

Tahini, Hassan

February 2014

The suitability of silicon for micro and sub-micro electronic devices is being challenged by the agg...

Electronic structural details of donor-vacancy complexes in Si-doped Ge and Ge-doped Si

Coutinho, J.
Castro, F.
Torres, V. J. B.
Carvalho, A.
Barroso, M.
Briddon, P. R.

December 2011

We present a detailed picture of the electronic structure of donor-vacancy complexes in Ge-doped sil...

Charge transition levels of the Ge dangling bond defect at Ge/insulator interfaces

Broqvist, P.
Alkauskas, A.
Pasquarello, A.

October 2009

We calculate defect levels of dangling bonds in germanium using hybrid density functionals. To valid...

Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge

Igumbor, E.
Dongho-Nguimdo, G.M.
Mapasha, Refilwe Edwin
Meyer, W.E. (Walter Ernst)

August 2019

Please read abstract in the article.This work is based on the research supported partly by National ...

Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC

Igumbor, E.
Dongho-Nguimdo, G.M.
Mapasha, Refilwe Edwin
Omotoso, E.
Meyer, W.E. (Walter Ernst)

July 2020

Please read the abstract in the article.The National Research foundation (NRF) of South Africa, the ...

Rare earth interstitial-complexes in Ge : hybrid density functional studies

Igumbor, Emmanuel
Omotoso, Ezekiel
Danga, Helga T.
Tunhuma, Shandirai Malven
Meyer, W.E. (Walter Ernst)

October 2017

Please read abstract in the article.The National Research Foundation (NRF) of South Africa [98961]ht...

Effect of Point Defects on Electronic Structure of Monolayer GeS

Hyeong-Kyu Choi
Janghwan Cha
Chang-Gyu Choi
Junghwan Kim
Suklyun Hong

November 2021

Using density functional theory calculations, atomic and electronic structure of defects in monolaye...

Rare earth substitutional impurities in germanium : a hybrid density functional theory study

Igumbor, Emmanuel
Omotoso, Ezekiel
Tunhuma, Shandirai Malven
Danga, Helga T.
Meyer, W.E. (Walter Ernst)

October 2017

Please read abstract in the article.The National Research Foundation (NRF) of South Africa [(UID) 98...

Compounds of Group 14 Elements with an Element–Element (E = Si, Ge, Sn) Bond: Effect of the Nature of the Element Atom

Kirill V. Zaitsev (1670158)
Elmira Kh. Lermontova (1670170)
Andrei V. Churakov (1549690)
Viktor A. Tafeenko (1411081)
Boris N. Tarasevich (1670155)
Oleg Kh. Poleshchuk (1670152)
Anastasia V. Kharcheva (1670161)
Tatiana V. Magdesieva (1621162)
Oleg M. Nikitin (1670167)
Galina S. Zaitseva (1670149)
Sergey S. Karlov (1670164)

June 2015

Two series of germanium compounds, (p-Tol)3Ge-MMe3 (M = Si (1), ...

“Donor–Acceptor” Oligogermanes: Synthesis, Structure, and Electronic Properties

Kirill V. Zaitsev (1670158)
Andrey A. Kapranov (1887736)
Andrei V. Churakov (1457788)
Oleg Kh. Poleshchuk (1670152)
Yuri F. Oprunenko (1887733)
Boris N. Tarasevich (1887730)
Galina S. Zaitseva (1887739)
Sergey S. Karlov (1670164)

November 2013

A series of oligogermanes, (Me3Si)3GeGeCl3, (C6F5</...

Ab Initio Modeling of Defects in Silicon, Germanium and SiGe Alloys

V. J. B. Torres
J. Coutinho
A. Carvalho
M. Barroso
L. Almeida
H. Pinto
R. M. Ribeiro

April 2015

Understanding the most elemental defects in semiconductors is a fundamental step to grasp the countl...

Ab-initio investigation of the antimony-vacancy complex and related defects in germanium

Webb, Geoffrey

September 2016

Recent advances in computational technology and algorithms have made it feasible to accurately model...

Electronic properties of vacancy-oxygen complex in Ge crystals

Markevich, VP
Hawkins, ID
Peaker, AR
Litvinov, VV
Murin, LI
Dobaczewski, L
Lindström, Lennart

January 2002

It is argued that the vacancy-oxygen (VO) complex (A center) in Ge has three charge states: double n...

Störstellenkomplexe in Halbleitern: Elektronenstruktur und Hyperfeineigenschaften

Höhler, Holger

January 2003

In the present thesis ab initio electronic structure calculations in the framework of the density fu...

Defect energy levels in la and Hf germanates on Ge

Li, H
Lin, L
Robertson, J
,

March 2013

We have calculated the energy levels of oxygen vacancies in LaGeO x and HfGeOx using a density funct...

Controlling Dopant Distributions and Structures in Advanced Semiconductors

Tahini, Hassan

February 2014

The suitability of silicon for micro and sub-micro electronic devices is being challenged by the agg...

Electronic structural details of donor-vacancy complexes in Si-doped Ge and Ge-doped Si

Coutinho, J.
Castro, F.
Torres, V. J. B.
Carvalho, A.
Barroso, M.
Briddon, P. R.

December 2011

We present a detailed picture of the electronic structure of donor-vacancy complexes in Ge-doped sil...

Charge transition levels of the Ge dangling bond defect at Ge/insulator interfaces

Broqvist, P.
Alkauskas, A.
Pasquarello, A.

October 2009

We calculate defect levels of dangling bonds in germanium using hybrid density functionals. To valid...

Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge

Igumbor, E.
Dongho-Nguimdo, G.M.
Mapasha, Refilwe Edwin
Meyer, W.E. (Walter Ernst)

August 2019

Please read abstract in the article.This work is based on the research supported partly by National ...

Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC

Igumbor, E.
Dongho-Nguimdo, G.M.
Mapasha, Refilwe Edwin
Omotoso, E.
Meyer, W.E. (Walter Ernst)

July 2020

Please read the abstract in the article.The National Research foundation (NRF) of South Africa, the ...

Rare earth interstitial-complexes in Ge : hybrid density functional studies

Igumbor, Emmanuel
Omotoso, Ezekiel
Danga, Helga T.
Tunhuma, Shandirai Malven
Meyer, W.E. (Walter Ernst)

October 2017

Please read abstract in the article.The National Research Foundation (NRF) of South Africa [98961]ht...

Effect of Point Defects on Electronic Structure of Monolayer GeS

Hyeong-Kyu Choi
Janghwan Cha
Chang-Gyu Choi
Junghwan Kim
Suklyun Hong

November 2021

Using density functional theory calculations, atomic and electronic structure of defects in monolaye...

Rare earth substitutional impurities in germanium : a hybrid density functional theory study

Igumbor, Emmanuel
Omotoso, Ezekiel
Tunhuma, Shandirai Malven
Danga, Helga T.
Meyer, W.E. (Walter Ernst)

October 2017

Please read abstract in the article.The National Research Foundation (NRF) of South Africa [(UID) 98...

Compounds of Group 14 Elements with an Element–Element (E = Si, Ge, Sn) Bond: Effect of the Nature of the Element Atom

Kirill V. Zaitsev (1670158)
Elmira Kh. Lermontova (1670170)
Andrei V. Churakov (1549690)
Viktor A. Tafeenko (1411081)
Boris N. Tarasevich (1670155)
Oleg Kh. Poleshchuk (1670152)
Anastasia V. Kharcheva (1670161)
Tatiana V. Magdesieva (1621162)
Oleg M. Nikitin (1670167)
Galina S. Zaitseva (1670149)
Sergey S. Karlov (1670164)

June 2015

Two series of germanium compounds, (p-Tol)3Ge-MMe3 (M = Si (1), ...

“Donor–Acceptor” Oligogermanes: Synthesis, Structure, and Electronic Properties

Kirill V. Zaitsev (1670158)
Andrey A. Kapranov (1887736)
Andrei V. Churakov (1457788)
Oleg Kh. Poleshchuk (1670152)
Yuri F. Oprunenko (1887733)
Boris N. Tarasevich (1887730)
Galina S. Zaitseva (1887739)
Sergey S. Karlov (1670164)

November 2013

A series of oligogermanes, (Me3Si)3GeGeCl3, (C6F5</...

Ab Initio Modeling of Defects in Silicon, Germanium and SiGe Alloys

V. J. B. Torres
J. Coutinho
A. Carvalho
M. Barroso
L. Almeida
H. Pinto
R. M. Ribeiro

April 2015

Understanding the most elemental defects in semiconductors is a fundamental step to grasp the countl...

Ab-initio investigation of the antimony-vacancy complex and related defects in germanium

Webb, Geoffrey

September 2016

Recent advances in computational technology and algorithms have made it feasible to accurately model...

Electronic properties of vacancy-oxygen complex in Ge crystals

Markevich, VP
Hawkins, ID
Peaker, AR
Litvinov, VV
Murin, LI
Dobaczewski, L
Lindström, Lennart

January 2002

It is argued that the vacancy-oxygen (VO) complex (A center) in Ge has three charge states: double n...

Störstellenkomplexe in Halbleitern: Elektronenstruktur und Hyperfeineigenschaften

Höhler, Holger

January 2003

In the present thesis ab initio electronic structure calculations in the framework of the density fu...

Defect energy levels in la and Hf germanates on Ge

Li, H
Lin, L
Robertson, J
,

March 2013

We have calculated the energy levels of oxygen vacancies in LaGeO x and HfGeOx using a density funct...

Controlling Dopant Distributions and Structures in Advanced Semiconductors

Tahini, Hassan

February 2014

The suitability of silicon for micro and sub-micro electronic devices is being challenged by the agg...

Electronic structural details of donor-vacancy complexes in Si-doped Ge and Ge-doped Si

Coutinho, J.
Castro, F.
Torres, V. J. B.
Carvalho, A.
Barroso, M.
Briddon, P. R.

December 2011

We present a detailed picture of the electronic structure of donor-vacancy complexes in Ge-doped sil...

Charge transition levels of the Ge dangling bond defect at Ge/insulator interfaces

Broqvist, P.
Alkauskas, A.
Pasquarello, A.

October 2009

We calculate defect levels of dangling bonds in germanium using hybrid density functionals. To valid...

Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge

Abstract

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Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge

Abstract

Extracted data

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