Hybrid functional study of hydrogen passivation in carbon-oxygen related defect complexes in silicon

Electronic properties and gap state defect passivation of Si SiO2 nanostructures

Stegemann, B.
Sixtensson, D.
Schmidt, M.

January 2008

Bandgap control of silicon based material provides a promising way towards next generation photovolt...

Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Silicon

De Guzman, Joyce Ann T.
Markevich, Vladimir P.
Coutinho, José
Abrosimov, Nikolay V.
Halsall, Matthew P.
Peaker, Anthony R.

September 2021

From Wiley via Jisc Publications RouterHistory: received 2021-06-27, rev-recd 2021-09-04, pub-electr...

First principles study of the stability and diffusion mechanism of a carbon vacancy in the vicinity of a SiO2/4H‐SiC interface.

Alsnani, H.
Goss, J. P.
Briddon, P. R.
Rayson, M. J.
Horsfall, A. B.

September 2019

We have studied the carbon vacancy in bulk 4H‐SiC and in the vicinity of an SiO /(0001)‐4H‐SiC inter...

First-principles study of the impact of hydrogen passivation on the charge state transition levels of the CiOi(Sii)n defect complexes in silicon

Abdurrazaq, Abdulgaffar
Raji, Abdulrafiu T.
Meyer, W.E. (Walter Ernst)

November 2020

Please read abstract in the article.The National Research foundation (NRF) of South Africa (Grant sp...

Ab initio study of the effect of hydrogen passivation on boron-oxygen-carbon related defect complexes in silicon

Abdurrazaq, Abdulgaffar
Raji, Abdulrafiu T.
Meyer, W.E. (Walter Ernst)

May 2020

Please read abstract in the article.The National Research Foundation (NRF) of South Africa (Grant s...

Wang, H.
Chroneos, A.
Londos, C.A.
Sgourou, E.N.
Schwingenschlögl, U.

May 2014

Electronic structure calculations employing hybrid functionals are used to gain insight into the int...

Passivation of copper in silicon by hydrogen

Latham, C. D.
Alatalo, M.
Nieminen, Risto M.
Jones, R.
Öberg, S.
Briddon, P. R.

January 2005

The structures and energies of model defects consisting of copper and hydrogen in silicon are calcul...

Theoretical models of hydrogen-induced defects in amorphous silicon dioxide

El-Sayed, Al-Moatasem
Wimmer, Yannick
Goes, Wolfgang
Grasser, Tibor
Afanas'ev, Valery
Shluger, Alexander L

July 2015

We used density functional theory (DFT) calculations to model the interaction of hydrogen atoms and ...

A first principles analysis of the effect of hydrogen concentration in hydrogenated amorphous silicon on the formation of strained Si-Si bonds and the optical and mobility gaps

Legesse, Merid
Nolan, Michael
Fagas, Gíorgos

September 2014

In this paper, we use a model of hydrogenated amorphous silicon generated from molecular dynamics wi...

The nature of silicon-hydrogen bonds in model device interfaces.

Nicholson, Kenneth Thomas

January 2002

Si-H bonds play a major role in microelectronic device technology. Upon electrical and thermal stres...

Electronic transport properties of a-Si:H

Li, Haili
Matsumoto, Mitsuhiro

March 2022

To investigate the electron transport properties of hydrogenated amorphous silicon (a-Si:H), a serie...

Analysis of hydrogen distribution and migration in fired passivating contacts (FPC)

Lehmann, Mario
Valle, Nathalie
Horzel, Jörg
Pshenova, Alisa
Wyss, Philippe
Döbeli, Max
Despeisse, Matthieu
Eswara, Santhana
Wirtz, Tom
Jeangros, Quentin
Hessler-Wyser, Aïcha
Haug, Franz-Josef
Ingenito, Andrea
Ballif, Christophe

August 2019

High temperature passivating contacts for c-Si based solar cells are intensively studied because of ...

Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study

Igumbor, Emmanuel
Olaniyan, Okikiola
Mapasha, Refilwe Edwin
Danga, Helga T.
Omotoso, Ezekiel
Meyer, W.E. (Walter Ernst)

January 2019

Please read abstract in the article.The National Research foundation (NRF) of South Africa (Grant sp...

Vacancy and interstitial defects in hafnia

Foster, Adam S.
Lopez Gejo, F.
Shluger, A. L.
Nieminen, Risto M.

January 2002

We have performed plane wave density functional theory calculations of atomic and molecular intersti...

Shielded hydrogen plasma: a new hydrogenation method for silicon solar cells

Bourret-Sicotte, GA

January 2019

Improving the efficiency of solar cells will play a key role in ensuring that solar generated power ...

Electronic properties and gap state defect passivation of Si SiO2 nanostructures

Stegemann, B.
Sixtensson, D.
Schmidt, M.

January 2008

Bandgap control of silicon based material provides a promising way towards next generation photovolt...

Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Silicon

De Guzman, Joyce Ann T.
Markevich, Vladimir P.
Coutinho, José
Abrosimov, Nikolay V.
Halsall, Matthew P.
Peaker, Anthony R.

September 2021

From Wiley via Jisc Publications RouterHistory: received 2021-06-27, rev-recd 2021-09-04, pub-electr...

First principles study of the stability and diffusion mechanism of a carbon vacancy in the vicinity of a SiO2/4H‐SiC interface.

Alsnani, H.
Goss, J. P.
Briddon, P. R.
Rayson, M. J.
Horsfall, A. B.

September 2019

We have studied the carbon vacancy in bulk 4H‐SiC and in the vicinity of an SiO /(0001)‐4H‐SiC inter...

First-principles study of the impact of hydrogen passivation on the charge state transition levels of the CiOi(Sii)n defect complexes in silicon

Abdurrazaq, Abdulgaffar
Raji, Abdulrafiu T.
Meyer, W.E. (Walter Ernst)

November 2020

Please read abstract in the article.The National Research foundation (NRF) of South Africa (Grant sp...

Ab initio study of the effect of hydrogen passivation on boron-oxygen-carbon related defect complexes in silicon

Abdurrazaq, Abdulgaffar
Raji, Abdulrafiu T.
Meyer, W.E. (Walter Ernst)

May 2020

Please read abstract in the article.The National Research Foundation (NRF) of South Africa (Grant s...

Wang, H.
Chroneos, A.
Londos, C.A.
Sgourou, E.N.
Schwingenschlögl, U.

May 2014

Electronic structure calculations employing hybrid functionals are used to gain insight into the int...

Passivation of copper in silicon by hydrogen

Latham, C. D.
Alatalo, M.
Nieminen, Risto M.
Jones, R.
Öberg, S.
Briddon, P. R.

January 2005

The structures and energies of model defects consisting of copper and hydrogen in silicon are calcul...

Theoretical models of hydrogen-induced defects in amorphous silicon dioxide

El-Sayed, Al-Moatasem
Wimmer, Yannick
Goes, Wolfgang
Grasser, Tibor
Afanas'ev, Valery
Shluger, Alexander L

July 2015

We used density functional theory (DFT) calculations to model the interaction of hydrogen atoms and ...

A first principles analysis of the effect of hydrogen concentration in hydrogenated amorphous silicon on the formation of strained Si-Si bonds and the optical and mobility gaps

Legesse, Merid
Nolan, Michael
Fagas, Gíorgos

September 2014

In this paper, we use a model of hydrogenated amorphous silicon generated from molecular dynamics wi...

The nature of silicon-hydrogen bonds in model device interfaces.

Nicholson, Kenneth Thomas

January 2002

Si-H bonds play a major role in microelectronic device technology. Upon electrical and thermal stres...

Electronic transport properties of a-Si:H

Li, Haili
Matsumoto, Mitsuhiro

March 2022

To investigate the electron transport properties of hydrogenated amorphous silicon (a-Si:H), a serie...

Analysis of hydrogen distribution and migration in fired passivating contacts (FPC)

Lehmann, Mario
Valle, Nathalie
Horzel, Jörg
Pshenova, Alisa
Wyss, Philippe
Döbeli, Max
Despeisse, Matthieu
Eswara, Santhana
Wirtz, Tom
Jeangros, Quentin
Hessler-Wyser, Aïcha
Haug, Franz-Josef
Ingenito, Andrea
Ballif, Christophe

August 2019

High temperature passivating contacts for c-Si based solar cells are intensively studied because of ...

Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study

Igumbor, Emmanuel
Olaniyan, Okikiola
Mapasha, Refilwe Edwin
Danga, Helga T.
Omotoso, Ezekiel
Meyer, W.E. (Walter Ernst)

January 2019

Please read abstract in the article.The National Research foundation (NRF) of South Africa (Grant sp...

Vacancy and interstitial defects in hafnia

Foster, Adam S.
Lopez Gejo, F.
Shluger, A. L.
Nieminen, Risto M.

January 2002

We have performed plane wave density functional theory calculations of atomic and molecular intersti...

Shielded hydrogen plasma: a new hydrogenation method for silicon solar cells

Bourret-Sicotte, GA

January 2019

Improving the efficiency of solar cells will play a key role in ensuring that solar generated power ...

Electronic properties and gap state defect passivation of Si SiO2 nanostructures

Stegemann, B.
Sixtensson, D.
Schmidt, M.

January 2008

Bandgap control of silicon based material provides a promising way towards next generation photovolt...

Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Silicon

De Guzman, Joyce Ann T.
Markevich, Vladimir P.
Coutinho, José
Abrosimov, Nikolay V.
Halsall, Matthew P.
Peaker, Anthony R.

September 2021

From Wiley via Jisc Publications RouterHistory: received 2021-06-27, rev-recd 2021-09-04, pub-electr...

First principles study of the stability and diffusion mechanism of a carbon vacancy in the vicinity of a SiO2/4H‐SiC interface.

Alsnani, H.
Goss, J. P.
Briddon, P. R.
Rayson, M. J.
Horsfall, A. B.

September 2019

We have studied the carbon vacancy in bulk 4H‐SiC and in the vicinity of an SiO /(0001)‐4H‐SiC inter...

Hybrid functional study of hydrogen passivation in carbon-oxygen related defect complexes in silicon

Abstract

Extracted data

Hybrid functional study of hydrogen passivation in carbon-oxygen related defect complexes in silicon

Abstract

Extracted data

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