Please read abstract in the article.The National Research foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961).http://www.elsevier.com/locate/mssp2020-01-01hj2018Physic
Silicon carbide has become an important material in the implementation of next generation photonics....
In the case of Al+ implanted 4H-SiC, a post implantation annealing temperature of 1950◦C has the ben...
The silicon vacancy (VSi) in 4H-SiC is a room temperature single-photon emitter with a controllable ...
Please read abstract in the article.The National Research Foundation (NRF) of South Africa (Grant sp...
PhD Thesis4H-SiC is an attractive material for high-power, high-temperature electronics because it ...
This thesis is focused on the atomistic modelling of defects both within silicon carbide (SiC) and a...
Please read abstract in the article.The University of Pretoria; Postdoctoral Fellowship Program of t...
We use molecular dynamics (MD) simulation with numerical characterisation and statistical analysis t...
The requirements of present high-performance power electronic systems are exceeding the power densit...
Basal-plane dislocations (BPDs) pose a great challenge to the reliability of bipolar power devices b...
Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon c...
The carbon vacancy in 4H-SiC is a powerful minority carrier recombination center in as-grown materia...
Using first-principles calculations for divacancy defects in 3C− and 4H−SiC, we determine their form...
n the case of Al+ implanted 4H-SiC, a post implantation annealing temperature of 1950 degrees C has ...
Please read the abstract in the article.The National Research foundation (NRF) of South Africa, the ...
Silicon carbide has become an important material in the implementation of next generation photonics....
In the case of Al+ implanted 4H-SiC, a post implantation annealing temperature of 1950◦C has the ben...
The silicon vacancy (VSi) in 4H-SiC is a room temperature single-photon emitter with a controllable ...
Please read abstract in the article.The National Research Foundation (NRF) of South Africa (Grant sp...
PhD Thesis4H-SiC is an attractive material for high-power, high-temperature electronics because it ...
This thesis is focused on the atomistic modelling of defects both within silicon carbide (SiC) and a...
Please read abstract in the article.The University of Pretoria; Postdoctoral Fellowship Program of t...
We use molecular dynamics (MD) simulation with numerical characterisation and statistical analysis t...
The requirements of present high-performance power electronic systems are exceeding the power densit...
Basal-plane dislocations (BPDs) pose a great challenge to the reliability of bipolar power devices b...
Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon c...
The carbon vacancy in 4H-SiC is a powerful minority carrier recombination center in as-grown materia...
Using first-principles calculations for divacancy defects in 3C− and 4H−SiC, we determine their form...
n the case of Al+ implanted 4H-SiC, a post implantation annealing temperature of 1950 degrees C has ...
Please read the abstract in the article.The National Research foundation (NRF) of South Africa, the ...
Silicon carbide has become an important material in the implementation of next generation photonics....
In the case of Al+ implanted 4H-SiC, a post implantation annealing temperature of 1950◦C has the ben...
The silicon vacancy (VSi) in 4H-SiC is a room temperature single-photon emitter with a controllable ...
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