Coupling of erbium-implanted silicon to a superconducting resonator

Erbium implanted silicon is promising for both photonic and quantum technology platforms, since it possesses both telecommunications and integrated circuit processing compatibility. However, several different Er centres are generated during the implantation and annealing process, the presence of which could hinder the development of these applications. When Si is co-implanted with 1017 cm-3 Er and 1020 cm-3 O ions, and the appropriate annealing process is used, one of these centres, which is present at higher Er concentrations, can be eliminated. Characterisation of samples with Er concentrations