Add to ORKGA new large-signal equivalent circuit model of a pHEMT with and without illumination has been developed. A HEMT oscillator operating at approximately 31 GHz has been designed and tested, based on this model. The optical tuning frequency range of 31 MHz under a halogen lamp and 60MHz under a GaAs laser illumination has been observed
Abstract:- This paper shows the latest results research on the optical control of a GaAs chip monoli...
HEMT devices exhibit excellent figures of merit for high frequency operation. Therefore they are str...
Abstract- This paper presents a systematic approach to designing negative-resistance and Colpitts os...
A new large-signal equivalent circuit model of a pHEMT with and without illumination has been develo...
A new large-signal equivalent circuit model of pHEMTs with and without illumination has been develop...
The direct optical control, tuning, FM modulation, and injection locking of a 2-GHz HEMT oscillator ...
Experimental results on direct and indirect optically controlled monolithically integrated oscillato...
An equivalent circuit for designing a coherent power combiner using a quasi-optical resonator has be...
For the first time an indirect optically controlled monolithic integrated oscillator was fabricated ...
A comprehensive large-signal HEMT model that provides a realistic description of measured characteri...
none6A recently proposed, technology-independent model is adopted for small- and large-signal perfo...
Large-signal SPICE models for heterojunction bipolar transistors (HBTs) and semiconductor lasers ar...
A recently proposed, technology-independent model is adopted for small- and large-signal performance...
The extraction of an accurate model for GaN HEMT devices is of fundamental importance for high-power...
A detailed study of monolithic InP-based HEMT oscillators for subterahertz operation is presented. I...
Abstract:- This paper shows the latest results research on the optical control of a GaAs chip monoli...
HEMT devices exhibit excellent figures of merit for high frequency operation. Therefore they are str...
Abstract- This paper presents a systematic approach to designing negative-resistance and Colpitts os...
A new large-signal equivalent circuit model of a pHEMT with and without illumination has been develo...
A new large-signal equivalent circuit model of pHEMTs with and without illumination has been develop...
The direct optical control, tuning, FM modulation, and injection locking of a 2-GHz HEMT oscillator ...
Experimental results on direct and indirect optically controlled monolithically integrated oscillato...
An equivalent circuit for designing a coherent power combiner using a quasi-optical resonator has be...
For the first time an indirect optically controlled monolithic integrated oscillator was fabricated ...
A comprehensive large-signal HEMT model that provides a realistic description of measured characteri...
none6A recently proposed, technology-independent model is adopted for small- and large-signal perfo...
Large-signal SPICE models for heterojunction bipolar transistors (HBTs) and semiconductor lasers ar...
A recently proposed, technology-independent model is adopted for small- and large-signal performance...
The extraction of an accurate model for GaN HEMT devices is of fundamental importance for high-power...
A detailed study of monolithic InP-based HEMT oscillators for subterahertz operation is presented. I...
Abstract:- This paper shows the latest results research on the optical control of a GaAs chip monoli...
HEMT devices exhibit excellent figures of merit for high frequency operation. Therefore they are str...
Abstract- This paper presents a systematic approach to designing negative-resistance and Colpitts os...