Add to ORKG© 1990 IOP Publishing Ltd.High temperature, very short time annealing techniques have been used to study dopant activation during and immediately after solid phase epitaxial regrowth of amorphous layers produced by ion implantation of As into Si. Short annealing timescales have revealed electrically inactive As tails, correlated with a region of implant-induced excess point defects, indicating the formation of stable dopant-interstitial complexes which are not removed during the timescales of these anneals
High depth resolution medium energy ion scattering (MEIS) has been used to examine the influence of ...
As the dimensions of semiconductor devices shrink down to 0.1#mu#m and beyond, low energy ion implan...
A description is given of a simple method for the transient annealing of ion-implanted semiconductor...
© 1990 IOP Publishing Ltd.High temperature, very short time annealing techniques have been used to s...
The level of activation in ultra-shallow As doped Si as a function of the anneal condition has been ...
Arsenic implants performed in Si at ultralow energy have been extensively studied with structural, c...
The possibility of using solid phase epitaxial regrowth (SPER) for activation of arsenic after amorp...
Arsenic implants performed in Si at ultralow energy have been extensively studied with structural, c...
As junction depths in advanced semiconductor devices move to below 20 nm, the process of disorder ev...
A major area of research for integrated electronic systems is the development of systems on glass or...
The stability and the evolution of electrical properties of high concentration arsenic ultra-shallow...
The electrical dopant activation of high-dose 49BF2 ion implanted layers was investigated as a funct...
Medium energy ion scattering (MEIS), operated at sub-nm depth resolution in the double alignment con...
The stability and the evolution of electrical properties of high concentration arsenic ultra-shallow...
High depth resolution medium energy ion scattering (MEIS) has been used to examine the influence of ...
High depth resolution medium energy ion scattering (MEIS) has been used to examine the influence of ...
As the dimensions of semiconductor devices shrink down to 0.1#mu#m and beyond, low energy ion implan...
A description is given of a simple method for the transient annealing of ion-implanted semiconductor...
© 1990 IOP Publishing Ltd.High temperature, very short time annealing techniques have been used to s...
The level of activation in ultra-shallow As doped Si as a function of the anneal condition has been ...
Arsenic implants performed in Si at ultralow energy have been extensively studied with structural, c...
The possibility of using solid phase epitaxial regrowth (SPER) for activation of arsenic after amorp...
Arsenic implants performed in Si at ultralow energy have been extensively studied with structural, c...
As junction depths in advanced semiconductor devices move to below 20 nm, the process of disorder ev...
A major area of research for integrated electronic systems is the development of systems on glass or...
The stability and the evolution of electrical properties of high concentration arsenic ultra-shallow...
The electrical dopant activation of high-dose 49BF2 ion implanted layers was investigated as a funct...
Medium energy ion scattering (MEIS), operated at sub-nm depth resolution in the double alignment con...
The stability and the evolution of electrical properties of high concentration arsenic ultra-shallow...
High depth resolution medium energy ion scattering (MEIS) has been used to examine the influence of ...
High depth resolution medium energy ion scattering (MEIS) has been used to examine the influence of ...
As the dimensions of semiconductor devices shrink down to 0.1#mu#m and beyond, low energy ion implan...
A description is given of a simple method for the transient annealing of ion-implanted semiconductor...