Add to ORKGA fast, quasi-two-dimensional physical MODFET model, capable of accurately simulating single-, multi-channel and pseudomorphic MODFETs has been developed. This has been used to predict DC, small- and large-signal microwave performance, and has been applied to microwave and millimeter wave device and circuit CAD
On overview on the state of the art and future trends in physics-based electron device modelling for...
Accurate small and large-signal models of metal-semiconductor field effect transistor (MESFET) devic...
This research effort advances millimeter-wave transistor modeling in a current RF/Microwave circuit ...
A fast, quasi-two-dimensional physical MODFET model, capable of accurately simulating single-, multi...
Modulation doped FETs (MODFETs) provide low-noise performance in many medium- and high-power microwa...
The linkage between a physical device simulator for small- and large-signal characterization and CAD...
A novel analytical dc model for the MODFET device is introduced. The model is based on the approxima...
A general technique for predicting the MODFET large signal performance has been developed. The techn...
The coupling between charge transport, heat and energy flow required to model high frequency power d...
A new MODFET circuit model required for millimeter-wave MMIC design has been developed, since it was...
A new quasi-two-dimensional physical model is described for microwave LDMOS power transistors. This ...
A compact model is presented for high-speed electro-optic modulators fully integrated within the fra...
Abstract — The coupling between charge transport, heat and energy flow required to model high frequ...
fT 90 GHz and fmax 188 GHz have been reported [1,2]. In order to make this promising technology Si...
An improved analytical two dimensional (2-D) model for AlGaN/GaN modulation doped field effect trans...
On overview on the state of the art and future trends in physics-based electron device modelling for...
Accurate small and large-signal models of metal-semiconductor field effect transistor (MESFET) devic...
This research effort advances millimeter-wave transistor modeling in a current RF/Microwave circuit ...
A fast, quasi-two-dimensional physical MODFET model, capable of accurately simulating single-, multi...
Modulation doped FETs (MODFETs) provide low-noise performance in many medium- and high-power microwa...
The linkage between a physical device simulator for small- and large-signal characterization and CAD...
A novel analytical dc model for the MODFET device is introduced. The model is based on the approxima...
A general technique for predicting the MODFET large signal performance has been developed. The techn...
The coupling between charge transport, heat and energy flow required to model high frequency power d...
A new MODFET circuit model required for millimeter-wave MMIC design has been developed, since it was...
A new quasi-two-dimensional physical model is described for microwave LDMOS power transistors. This ...
A compact model is presented for high-speed electro-optic modulators fully integrated within the fra...
Abstract — The coupling between charge transport, heat and energy flow required to model high frequ...
fT 90 GHz and fmax 188 GHz have been reported [1,2]. In order to make this promising technology Si...
An improved analytical two dimensional (2-D) model for AlGaN/GaN modulation doped field effect trans...
On overview on the state of the art and future trends in physics-based electron device modelling for...
Accurate small and large-signal models of metal-semiconductor field effect transistor (MESFET) devic...
This research effort advances millimeter-wave transistor modeling in a current RF/Microwave circuit ...