Radiative and Auger Recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs Quantum-well Lasers Measured Under High Pressure at Low and Room Temperatures

We report on the pressure dependence of the threshold current in 1.3 mum InGaAsP and 1.5 mum InGaAs quantum-well lasers measured at low temperatures similar to100 K. It was found that the threshold current of both devices slowly increases with increasing pressure (i.e., increasing band gap) at similar to100 K consistent with the calculated variation of the radiative current. In contrast, at room temperature we observed a reduction of the threshold current with increasing pressure. Our low-temperature, high-pressure data confirm the results of previous atmospheric pressure measurements on the same devices which indicated a transition in the dominant recombination mechanism from radiative to Auger as the device temperature is increased from similar to100 to 300 K.