The implantation of helium ions into lithium niobate produces a reduction in its refractive indices, due to radiation damage produced close to the end of the ion trajectories. This reduction can be utilised to form the boundaries of optical waveguides, which form the basis of any integrated optical circuit. Stripe waveguide fabrication using ion implantation has been demonstrated for the first time in this work. Firstly a buried damage layer was formed to define the depth of the waveguide, followed by additional implants around a gold mask to form the waveguide sidewalls. The gold mask was used to protect the guiding region during the latter implantation process. The waveguides were evaluated using the end-fire coupling technique to excite ...
The optical waveguide was formed on an LiNbO3 substrate by 2.6 MeV nickel ions implantation to the d...
Ion implantation is a very useful technique which can be used to modify the optical properties of in...
x-cut Nd : MgO: LiNbO3 wafers are implanted with 3MeV O+ ions at a dose of 6 x 10(14) cm(-2), direct...
A buried layer of damaged material with reduced refractive indices can result from implantation of M...
The monomode enhanced-index LiNbO3 waveguide fabricated by low-dose ion implantation is reported. Li...
Ion beam implantation has been used as a postprocessing technique to dramatically reduce the photore...
This thesis presents the results of a study of ion-beam implantation (IBI) and the effect it has on ...
The influence of different annealing conditions on refractive index profiles of He and H ions implan...
The refractive indexes, material attenuation and damage fractions of a multi-step ion implanted Lith...
A barrier planar waveguide was fabricated in z-cut LiNbdO(3) crystals by 4.5-MeV lithium ion implant...
Available from British Library Document Supply Centre- DSC:DX75446/87 / BLDSC - British Library Docu...
Single-mode waveguides in LiNbO3 are demonstrated by use of prism coupling method. The waveguides ar...
The propagation losses (PL) of lithium niobate optical planar waveguides fabricated by swift heavy-i...
The undesirable photorefractive properties inherent in materials like LiNbO3 and LiTaO3 seriously li...
International audienceHeavy mass ions, Kr and Xe, having energies in the ~10 MeV/amu range have been...
The optical waveguide was formed on an LiNbO3 substrate by 2.6 MeV nickel ions implantation to the d...
Ion implantation is a very useful technique which can be used to modify the optical properties of in...
x-cut Nd : MgO: LiNbO3 wafers are implanted with 3MeV O+ ions at a dose of 6 x 10(14) cm(-2), direct...
A buried layer of damaged material with reduced refractive indices can result from implantation of M...
The monomode enhanced-index LiNbO3 waveguide fabricated by low-dose ion implantation is reported. Li...
Ion beam implantation has been used as a postprocessing technique to dramatically reduce the photore...
This thesis presents the results of a study of ion-beam implantation (IBI) and the effect it has on ...
The influence of different annealing conditions on refractive index profiles of He and H ions implan...
The refractive indexes, material attenuation and damage fractions of a multi-step ion implanted Lith...
A barrier planar waveguide was fabricated in z-cut LiNbdO(3) crystals by 4.5-MeV lithium ion implant...
Available from British Library Document Supply Centre- DSC:DX75446/87 / BLDSC - British Library Docu...
Single-mode waveguides in LiNbO3 are demonstrated by use of prism coupling method. The waveguides ar...
The propagation losses (PL) of lithium niobate optical planar waveguides fabricated by swift heavy-i...
The undesirable photorefractive properties inherent in materials like LiNbO3 and LiTaO3 seriously li...
International audienceHeavy mass ions, Kr and Xe, having energies in the ~10 MeV/amu range have been...
The optical waveguide was formed on an LiNbO3 substrate by 2.6 MeV nickel ions implantation to the d...
Ion implantation is a very useful technique which can be used to modify the optical properties of in...
x-cut Nd : MgO: LiNbO3 wafers are implanted with 3MeV O+ ions at a dose of 6 x 10(14) cm(-2), direct...