Add to ORKGWe overview how the novel electronic structure of dilute nitride alloys modifies the gain characteristics of GaInNAs lasers. Optimised devices should have comparable or better characteristics than InP-based emitters, enabling GaAs-based 1.3 μm vertical emitting lasers. ©2000 Optical Society of America
International audienceGrowth and properties of GaNAsSb alloys are investigated and compared with tho...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
Abstract—We review the recent developments in GaAs-based 1.55- m lasers grown by molecular beam epit...
The objective of this work is to study the electronic properties of GaInNAs semiconductor alloy in o...
Since their introduction, GaInNAs(Sb) alloys have enabled the extension of the operation of GaAs-bas...
Highly mismatched semiconductor alloys such as GaN As and GaBi As have several novel electronic prop...
Highly mismatched semiconductor alloys such as GaN As and GaBi As have several novel electronic prop...
This thesis focuses on the theoretical analysis of GalnNAs alloys for use in optoelectronic devices....
This thesis studies the novel dilute nitride semiconductor materials, GaInNAs and GalnNAsSb, and the...
Dilute nitride semiconductors are a topic of major current research interest owing to the novel phys...
We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength photodiode...
We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength photodiode...
III-V semiconductors components such as Gallium Arsenic (GaAs), Indium Antimony (InSb), Aluminum Ars...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
International audienceGrowth and properties of GaNAsSb alloys are investigated and compared with tho...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
Abstract—We review the recent developments in GaAs-based 1.55- m lasers grown by molecular beam epit...
The objective of this work is to study the electronic properties of GaInNAs semiconductor alloy in o...
Since their introduction, GaInNAs(Sb) alloys have enabled the extension of the operation of GaAs-bas...
Highly mismatched semiconductor alloys such as GaN As and GaBi As have several novel electronic prop...
Highly mismatched semiconductor alloys such as GaN As and GaBi As have several novel electronic prop...
This thesis focuses on the theoretical analysis of GalnNAs alloys for use in optoelectronic devices....
This thesis studies the novel dilute nitride semiconductor materials, GaInNAs and GalnNAsSb, and the...
Dilute nitride semiconductors are a topic of major current research interest owing to the novel phys...
We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength photodiode...
We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength photodiode...
III-V semiconductors components such as Gallium Arsenic (GaAs), Indium Antimony (InSb), Aluminum Ars...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
International audienceGrowth and properties of GaNAsSb alloys are investigated and compared with tho...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
Abstract—We review the recent developments in GaAs-based 1.55- m lasers grown by molecular beam epit...