We are reporting for the first time, lasing operation at room temperature (RT) with a low threshold current density (Jth) in novel direct band-gap Ga(NAsP)/GaP QW lasers. A carrier leakage process is found to dominate the temperature dependence of the laser threshold current
Very-low-threshold Ga0.62In0.38N 0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers e...
The authors have grown self-assembled InP quantum dot lasers on GaAs substrate by MOVPE with 750°C g...
The authors have grown self-assembled InP quantum dot lasers on GaAs substrate by MOVPE with 750°C g...
Lasing operation up to 120K is reported in novel direct band-gap Ga(NAsP)/(BGa)P lasers grown monoli...
Lasing operation up to 120K is reported in novel direct band-gap Ga(NAsP)/(BGa)P lasers grown monoli...
Recent significant improvements in Ga(NAsP)/GaP quantum well lasers grown by metal organic vapour ph...
In this paper the authors present a comprehensive study of the threshold current and its temperature...
The novel Ga(NAsP)-based semiconductors have recently grown in popularity due to applications such a...
The novel Ga(NAsP)-based semiconductors have recently grown in popularity due to applications such a...
The novel Ga(NAsP)-based semiconductors have recently grown in popularity due to applications such a...
InGaAs/InGaAsP MQW SC lasers for 1.55 mu m emission wavelength with different numbers of quantum wel...
Thermally activated carrier leakage via defects is found to be very sensitive to the growth temperat...
The novel Ga(NAsP)-based semiconductors have recently grown in popularity due to applications such a...
This paper reports the improvements and limitations of MBE grown 1.3μm GaAsSb/GaAs single QW lasers....
Very-low-threshold Ga0.62In0.38N 0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers e...
Very-low-threshold Ga0.62In0.38N 0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers e...
The authors have grown self-assembled InP quantum dot lasers on GaAs substrate by MOVPE with 750°C g...
The authors have grown self-assembled InP quantum dot lasers on GaAs substrate by MOVPE with 750°C g...
Lasing operation up to 120K is reported in novel direct band-gap Ga(NAsP)/(BGa)P lasers grown monoli...
Lasing operation up to 120K is reported in novel direct band-gap Ga(NAsP)/(BGa)P lasers grown monoli...
Recent significant improvements in Ga(NAsP)/GaP quantum well lasers grown by metal organic vapour ph...
In this paper the authors present a comprehensive study of the threshold current and its temperature...
The novel Ga(NAsP)-based semiconductors have recently grown in popularity due to applications such a...
The novel Ga(NAsP)-based semiconductors have recently grown in popularity due to applications such a...
The novel Ga(NAsP)-based semiconductors have recently grown in popularity due to applications such a...
InGaAs/InGaAsP MQW SC lasers for 1.55 mu m emission wavelength with different numbers of quantum wel...
Thermally activated carrier leakage via defects is found to be very sensitive to the growth temperat...
The novel Ga(NAsP)-based semiconductors have recently grown in popularity due to applications such a...
This paper reports the improvements and limitations of MBE grown 1.3μm GaAsSb/GaAs single QW lasers....
Very-low-threshold Ga0.62In0.38N 0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers e...
Very-low-threshold Ga0.62In0.38N 0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers e...
The authors have grown self-assembled InP quantum dot lasers on GaAs substrate by MOVPE with 750°C g...
The authors have grown self-assembled InP quantum dot lasers on GaAs substrate by MOVPE with 750°C g...
DOI
Add to ORKG