Thermal Processing Effects in Proton-Isolated N-Type GaAs Devices
- Ahmed, S
- Amirov, K
- Larsson, U
- Too, P
- Sealy, B J
- Gwilliam, R
Publication date
January 2019
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
In this paper we present the results of two new experiments (1) Infrared Reflectivity (IR) measurements of the thickness of the modified layers following the proton implantation in n-type GaAs layers at various implant temperatures and (2) a detailed study of the thermal stability of n-type GaAs layers isolated by proton implantation. It is found that the threshold dose (minimum implant dose required for a maximum sheet resistivity) for a device is a key parameter to obtain good thermal stability. The optical properties also depend on the implantation temperature and dose.</p
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