Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive phases within solid-state memory devices, enabling their resistive switching capacity. The quantitative spatial identification of such conductive regions is a daunting task, particularly for metal-oxides capable of exhibiting multiple phases as in the case of TiOx. Here, we spatially resolve and chemically characterize distinct TiOx phases in localized regions of a TiOx–based memristive device by combining full-field transmission X-ray microscopy with soft X-ray spectroscopic analysis that is performed on lamella samples. We particularly show that electrically pre-switched devices in lowresistive states comprise reduced disordered ...
Resistive switching materials - including resistive oxides - raise significant scientific and indust...
Identification of microstructural evolution of nanoscale conducting phase, such as conducting filame...
<p>Random Access Memory (RRAM) has emerged as a leading candidate for nonvolatile memory storage. RR...
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming ...
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming ...
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming ...
Reduction in metal oxide thin films has been suggested as the key mechanism responsible for forming ...
Titanium dioxide (TiO2) has been widely used as resistive switching oxide in random-access memory de...
The file attached to this record is the author's final peer reviewed version. The Publisher's final ...
The next generation of nonvolatile memory storage may well be based on resistive switching in metal ...
The quest for a non-volatile, small and fast computer memory calls for new memory concepts. Resistiv...
The next generation of nonvolatile memory storage may well be based on resistive switching in metal ...
This data is used in the paper 'Spatially resolved TiOx phases in switched RRAM devices using so...
Metal–insulator–metal (MIM) devices based on titanium dioxide thin films exhibit resistive switching...
We used spatially-resolved NEXAFS (near-edge x-ray absorption fine structure) spectroscopy coupled w...
Resistive switching materials - including resistive oxides - raise significant scientific and indust...
Identification of microstructural evolution of nanoscale conducting phase, such as conducting filame...
<p>Random Access Memory (RRAM) has emerged as a leading candidate for nonvolatile memory storage. RR...
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming ...
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming ...
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming ...
Reduction in metal oxide thin films has been suggested as the key mechanism responsible for forming ...
Titanium dioxide (TiO2) has been widely used as resistive switching oxide in random-access memory de...
The file attached to this record is the author's final peer reviewed version. The Publisher's final ...
The next generation of nonvolatile memory storage may well be based on resistive switching in metal ...
The quest for a non-volatile, small and fast computer memory calls for new memory concepts. Resistiv...
The next generation of nonvolatile memory storage may well be based on resistive switching in metal ...
This data is used in the paper 'Spatially resolved TiOx phases in switched RRAM devices using so...
Metal–insulator–metal (MIM) devices based on titanium dioxide thin films exhibit resistive switching...
We used spatially-resolved NEXAFS (near-edge x-ray absorption fine structure) spectroscopy coupled w...
Resistive switching materials - including resistive oxides - raise significant scientific and indust...
Identification of microstructural evolution of nanoscale conducting phase, such as conducting filame...
<p>Random Access Memory (RRAM) has emerged as a leading candidate for nonvolatile memory storage. RR...