Intrinsic limitations of p-doped and undoped 1.3 μm InAs/GaAs quantum dot lasers
- Massé, NF
- Sweeney, SJ
- Marko, IP
- Andreev, AD
- Adams, AR
- Hatori, N
- Sugawara, M
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
The temperature dependencies of the recombination and gain processes reveal intrinsic limitations on the performances of quantum dot lasers. Controlling the transport of the carriers using the inhomogeneous broadening makes temperature stable threshold current possibl
Add to ORKG