The low temperature form of the iron disilicide (P-FeSi2) phase has been widely shown to be a promising material for Si-based opto-electronics devices due to its direct band gap (0.87 eV). These materials can be easily produced using a wide range of techniques. This work focuses on two techniques that utilises an ion beam, ion beam assisted deposition (IBAD) and ion beam synthesis (IBS). IBAD has been identified as a suitable technique for producing low cost material over large areas, which is particularly important for applications as solar cells, McKinty et al (2002), This thesis reports in details on the work to optimise the microstructures of four materials. Fe deposited on Si in the ratio of 29%; 71% and produced using IBAD and Fe impl...
The epitaxial growth of FeSi2 silicides was studied by using ion-beam epitaxial crystallization (IBI...
This study presents an optimization and characterization of amorphous Iron Disilicide (a‐FeSi2) synt...
Iron-disilicide precipitates were formed by two different processes; (i) Fe+ ion implantation in Si ...
The low temperature form of the iron disilicide (P-FeSi2) phase has been widely shown to be a promis...
This paper reports the investigation of polycrystalline beta-FeSi2 films grown by Ion Beam Assisted ...
The compositional phases of ion beam synthesized Fe–Si structures at two high fluences (0.50 × 1017 ...
The fundamental properties of the binary disilicides CoSi2 and FeSi2 have been extensively studied. ...
The fundamental properties of the binary disilicides CoSi2 and FeSi2 have been extensively studied. ...
The structural and optical properties of Ion Beam Synthesised (IBS) semiconducting FeSi2 (beta-FeSi2...
The structural and optical properties of Ion Beam Synthesised (IBS) semiconducting FeSi2 (beta-FeSi2...
beta-FeSi2 has been shown to have a minimum direct band gap of 0.87 eV, which leads to the opportuni...
This study deals with structural and optical properties of beta-FeSi(2) layers produced by direct io...
beta-FeSi2 has been shown to have a minimum direct band gap of 0.87 eV, which leads to the opportuni...
This study deals with structural and optical properties of beta-FeSi(2) layers produced by direct io...
The iron silicides are considered key materials for silicon integrated optoelectronic devices. This ...
The epitaxial growth of FeSi2 silicides was studied by using ion-beam epitaxial crystallization (IBI...
This study presents an optimization and characterization of amorphous Iron Disilicide (a‐FeSi2) synt...
Iron-disilicide precipitates were formed by two different processes; (i) Fe+ ion implantation in Si ...
The low temperature form of the iron disilicide (P-FeSi2) phase has been widely shown to be a promis...
This paper reports the investigation of polycrystalline beta-FeSi2 films grown by Ion Beam Assisted ...
The compositional phases of ion beam synthesized Fe–Si structures at two high fluences (0.50 × 1017 ...
The fundamental properties of the binary disilicides CoSi2 and FeSi2 have been extensively studied. ...
The fundamental properties of the binary disilicides CoSi2 and FeSi2 have been extensively studied. ...
The structural and optical properties of Ion Beam Synthesised (IBS) semiconducting FeSi2 (beta-FeSi2...
The structural and optical properties of Ion Beam Synthesised (IBS) semiconducting FeSi2 (beta-FeSi2...
beta-FeSi2 has been shown to have a minimum direct band gap of 0.87 eV, which leads to the opportuni...
This study deals with structural and optical properties of beta-FeSi(2) layers produced by direct io...
beta-FeSi2 has been shown to have a minimum direct band gap of 0.87 eV, which leads to the opportuni...
This study deals with structural and optical properties of beta-FeSi(2) layers produced by direct io...
The iron silicides are considered key materials for silicon integrated optoelectronic devices. This ...
The epitaxial growth of FeSi2 silicides was studied by using ion-beam epitaxial crystallization (IBI...
This study presents an optimization and characterization of amorphous Iron Disilicide (a‐FeSi2) synt...
Iron-disilicide precipitates were formed by two different processes; (i) Fe+ ion implantation in Si ...